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The out-of-control action plan (OCAP) is crucial in the wafer probing process of semiconductor manufacturing as it systematically addresses and corrects deviations, ensuring the high quality and reliability of semiconductor devices. However, the traditional OCAP involves many redundant and complicated processes after failures occur on production lines, which can delay production and escalate costs. To overcome the traditional OCAP's limitations, this paper proposes a novel OCAP aimed at enhancing the wafer probing process in semiconductor manufacturing. The proposed OCAP integrates proactive measures such as preventive maintenance and advanced monitoring technologies, which are tested and verified through a comprehensive experimental setup. Implementing the novel OCAP in a case company's production line reduced machine downtime by over 24 h per week and increased wafer production by about 23 wafers per week. Additionally, probe test yield improved by an average of 1.1%, demonstrating the effectiveness of the proposed method. This paper not only explores the implementation of the novel OCAP but also compares it with the traditional OCAP, highlighting significant improvements in efficiency and production output. The results underscore the potential of advanced OCAP to enhance manufacturing processes by reducing dependency on human judgment, thus lowering the likelihood of errors and improving overall equipment effectiveness (OEE).
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11360072 | PMC |
http://dx.doi.org/10.3390/s24165116 | DOI Listing |
Biosens Bioelectron
January 2025
The Estelle and Daniel Maggin Department of Neurology, Icahn School of Medicine at Mount Sinai, New York, NY, 10029, USA; BioMedical Engineering & Imaging Institute, Leon and Norma Hess Center for Science and Medicine, Icahn School of Medicine at Mount Sinai, New York, NY, 10029, USA. Electronic address:
This paper presents a microneedle thermocouple probe designed for temperature measurements in biological samples, addressing a critical need in the field of biology. Fabricated on a Silicon-On-Insulator (SOI) wafer, the probe features a doped silicon (Si)/chrome (Cr)/gold (Au) junction, providing a high Seebeck coefficient, rapid response times, and excellent temperature resolution. The microfabrication process produces a microneedle with a triangular sensing junction.
View Article and Find Full Text PDFSensors (Basel)
August 2024
Surfix Diagnostics, Agro Business Park 2, 6708 PW Wageningen, The Netherlands.
Aquaculture is expected to play a vital role in solving the challenge of sustainably providing the growing world population with healthy and nutritious food. Pathogen outbreaks are a major risk for the sector, so early detection and a timely response are crucial. This can be enabled by monitoring the pathogen levels in aquaculture facilities.
View Article and Find Full Text PDFSensors (Basel)
August 2024
Industry 4.0 Convergence Bionics Engineering, Pukyong National University, Busan 48513, Republic of Korea.
A scanning acoustic microscopy (SAM) system is a common non-destructive instrument which is used to evaluate the material quality in scientific and industrial applications. Technically, the tested sample is immersed in water during the scanning process. Therefore, a robot arm is incorporated into the SAM system to transfer the sample for in-line inspection, which makes the system complex and increases time consumption.
View Article and Find Full Text PDFSensors (Basel)
August 2024
Department of Management Sciences, R.O.C. Military Academy, Kaohsiung 830, Taiwan.
The out-of-control action plan (OCAP) is crucial in the wafer probing process of semiconductor manufacturing as it systematically addresses and corrects deviations, ensuring the high quality and reliability of semiconductor devices. However, the traditional OCAP involves many redundant and complicated processes after failures occur on production lines, which can delay production and escalate costs. To overcome the traditional OCAP's limitations, this paper proposes a novel OCAP aimed at enhancing the wafer probing process in semiconductor manufacturing.
View Article and Find Full Text PDFMicromachines (Basel)
July 2024
JFS Laboratory, Wuhan 430074, China.
A series of characterization methods involving high-resolution X-ray diffraction (HR-XRD), electron channel contrast imaging (ECCI), cathodoluminescence microscopy (CL), and atomic force microscopy (AFM) were applied to calculate the dislocation density of GaN-on-Si epitaxial wafers, and their performance was analyzed and evaluated. The ECCI technique, owing to its high lateral resolution, reveals dislocation distributions on material surfaces, which can visually characterize the dislocation density. While the CL technique is effective for low-density dislocations, it is difficult to accurately identify the number of dislocation clusters in CL images as the density increases.
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