Study on 1550 nm Human Eye-Safe High-Power Tunnel Junction Quantum Well Laser.

Micromachines (Basel)

Hainan International Joint Research Center for Semiconductor Lasers, Hainan Normal University, Haikou 571158, China.

Published: August 2024

AI Article Synopsis

  • 1550 nm semiconductor lasers are safe for human eyes and are used in LIDAR, optical communication, and gas sensing applications.
  • A new high-power laser design features three quantum well structures and uses photolithography and etching to create trenches that enhance performance by reducing extension current.
  • The resulting laser device achieved a pulsed peak power of 31 W with good efficiency and specific divergence angles, making it suitable for fog-transparent imaging and fast-ranging radar systems.

Article Abstract

Falling within the safe bands for human eyes, 1550 nm semiconductor lasers have a wide range of applications in the fields of LIDAR, fast-ranging long-distance optical communication, and gas sensing. The 1550 nm human eye-safe high-power tunnel junction quantum well laser developed in this paper uses three quantum well structures connected by two tunnel junctions as the active region; photolithography and etching were performed to form two trenches perpendicular to the direction of the epitaxial layer growth with a depth exceeding the tunnel junction, and the trenches were finally filled with oxides to reduce the extension current. Finally, a 1550 nm InGaAlAs quantum well laser with a pulsed peak power of 31 W at 30 A (10 KHz, 100 ns) was realized for a single-emitter laser device with an injection strip width of 190 μm, a ridge width of 300 μm, and a cavity length of 2 mm, with a final slope efficiency of 1.03 W/A, and with a horizontal divergence angle of about 13° and a vertical divergence angle of no more than 30°. The device has good slope efficiency, and this 100 ns pulse width can be effectively applied in the fields of fog-transparent imaging sensors and fast headroom ranging radar areas.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11355963PMC
http://dx.doi.org/10.3390/mi15081042DOI Listing

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