AI Article Synopsis
- The article investigates the ideal pulsed laser energy density for creating MoS films using pulsed laser deposition (PLD) and finds that 100 mJ·cm is the most effective setting.
- It reports that films produced at this energy density exhibit superior surface morphology and crystallization, specifically showing a high-crystallized 2H-MoS phase with strong (002) alignment.
- Additionally, the study highlights that the resulting Si/MoS heterojunction demonstrates a voltage of 0.61 V and a rectification ratio of 457.0 under the optimal conditions.
Article Abstract
This article aims to explore the most optimal pulsed laser energy density when using the pulsed laser deposition (PLD) process to prepare the MoS films. We gradually increased the pulsed laser energy density from 70 mJ·cm to 110 mJ·cm and finally determined that 100 mJ·cm was the best-pulsed laser energy density for MoS films by PLD. The surface morphology and crystallization of the MoS films prepared under this condition are the best. The films consist of a high-crystallized 2H-MoS phase with strong (002) preferential orientation, and their direct optical band gap (E) is 1.614 eV. At the same time, the Si/MoS heterojunction prepared under the optimal pulsed laser energy density shows an opening voltage of 0.61 V and a rectification ratio of 457.0.
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Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11356575 | PMC |
| http://dx.doi.org/10.3390/mi15080945 | DOI Listing |
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