Two-dimensional (2D) transition metal dichalcogenide (TMD) heterostructures have attracted a lot of attention due to their rich material diversity and stack geometry, precise controllability of structure and properties, and potential practical applications. These heterostructures not only overcome the inherent limitations of individual materials but also enable the realization of new properties through appropriate combinations, establishing a platform to explore new physical and chemical properties at micro-nano-pico scales. In this review, we systematically summarize the latest research progress in the synthesis, modulation, and application of 2D TMD heterostructures. We first introduce the latest techniques for fabricating 2D TMD heterostructures, examining the rationale, mechanisms, advantages, and disadvantages of each strategy. Furthermore, we emphasize the importance of characteristic modulation in 2D TMD heterostructures and discuss some approaches to achieve novel functionalities. Then, we summarize the representative applications of 2D TMD heterostructures. Finally, we highlight the challenges and future perspectives in the synthesis and device fabrication of 2D TMD heterostructures and provide some feasible solutions.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1021/acs.chemrev.4c00174 | DOI Listing |
J Phys Condens Matter
January 2025
ECE Department, University of Wisconsin at Madison, 1415 Engineering Dr, Rm 3442, Madison, WI 53706, USA, Madison, Wisconsin, 53706, UNITED STATES.
Two-dimensional (2D) van der Waals materials are shaping the landscape of next-generation devices, offering significant technological value thanks to their unique, tunable, and layer-dependent electronic and optoelectronic properties. Time-domain spectroscopic techniques at terahertz (THz) frequencies offer noninvasive, contact-free methods for characterizing the dynamics of carriers in 2D materials. They also pave the path toward the applications of 2D materials in detection, imaging, manufacturing, and communication within the increasingly important THz frequency range.
View Article and Find Full Text PDFACS Nano
January 2025
Institute of Advanced Energy, Kyoto University, Uji, Kyoto 611-0011, Japan.
Interlayer excitons (IXs) in the heterostructure of monolayer transition metal dichalcogenides (TMDs) are considered as a promising platform to study fundamental exciton physics and for potential applications of next generation optoelectronic devices. The IXs trapped in the moiré potential in a twisted monolayer TMD heterostructure such as MoSe/WSe form zero-dimensional (0D) moiré excitons. Introducing an atomically thin insulating layer between TMD monolayers in a twisted heterostructure would modulate the moiré potential landscape, thereby tuning 0D IXs into 2D IXs.
View Article and Find Full Text PDFChem Rev
January 2025
Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005, United States.
Two-dimensional transition metal dichalcogenides (2D TMDs) are a promising class of functional materials for fundamental physics explorations and applications in next-generation electronics, catalysis, quantum technologies, and energy-related fields. Theory and simulations have played a pivotal role in recent advancements, from understanding physical properties and discovering new materials to elucidating synthesis processes and designing novel devices. The key has been developments in theory, deep learning, molecular dynamics, high-throughput computations, and multiscale methods.
View Article and Find Full Text PDFNano Lett
December 2024
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States.
We demonstrate an approach to creating nanoscale potentials in van der Waals layers integrated with a buried programmable ferroelectric layer. Using ultra-low-voltage electron beam lithography (ULV-EBL), we can program the ferroelectric polarization in AlBN (AlBN) thin films, generating structures with sizes as small as 35 nm. We demonstrate the ferroelectric field effect with a graphene/vdW stack on AlBN by creating a p-n junction.
View Article and Find Full Text PDFACS Nano
December 2024
Department of Materials, University of Manchester, Manchester M13 9PL, U.K.
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!