AI Article Synopsis
- Swift heavy ion (SHI) irradiation modifies the properties of thin oxide films by creating defects and structural changes, specifically in BaTiO (BTO) films on Nb:SrTiO substrates.
- Memristors made from these irradiated BTO films demonstrated impressive retention, endurance, and stable synaptic plasticity functions, enabling effective data processing.
- Utilizing an artificial neural network, the memristors achieved a high discrimination accuracy of 92.5% for handwritten digit recognition, highlighting the potential of SHI irradiation for neuromorphic computing applications.
Article Abstract
Swift heavy ion (SHI) irradiation is an effective method for modulating the properties of thin oxide films by introducing defects, strains, and structural transformations. Here, we applied 516 MeV Xe irradiation to BaTiO (BTO) thin films grown on Nb:SrTiO substrates to induce the generation of tracks and nanohillocks. Memristors with BTO films irradiated at a fluence of 5 × 10 ions cm displayed excellent retention and endurance characteristics. Moreover, the memristors exhibited highly stable synaptic plasticity functions such as excitatory/inhibitory post-synaptic currents (E/IPSC) and paired-pulse facilitation/depression (PPF/D). The memristors achieved a discrimination accuracy of 92.5% on given handwritten digit data by an artificial neural network with supervised learning. These results verify that the judicious application of SHI irradiation on thin oxide films is a viable strategy for exploring neuromorphic computation.
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