AI Article Synopsis
- * Scanning tunneling microscopy studies found a significant quantum state near the Fermi energy that remains consistent across the moiré lattice, but shifts slightly in different areas due to elastic strain.
- * Density functional theory calculations reveal that this enhanced quantum state is due to charge redistribution between the substrate and the epilayer, influenced by Se atom orbitals in the distorted VSe.*
Article Abstract
We have successfully fabricated single-layer (SL) 1T-VSe/BiSe heterostructures using molecular beam epitaxy (MBE), which exhibits uniform moiré patterns on the heterostructure surface. Scanning tunneling microscopy/spectroscopy (STM/STS) reveals a notable quantum state near the Fermi energy, robust across the entire moiré lattice. This quantum state peak shifts slightly across different domain ranges, suggesting an elastic strain dependence in SL VSe, confirmed by geometric phase analysis (GPA) simulations. Density functional theory (DFT) calculations indicate that the enhanced quantum state results from charge redistribution between the substrate and the epifilm with the orbitals of Se atoms in the deformed VSe playing a dominant role.
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| http://dx.doi.org/10.1021/acsnano.4c03139 | DOI Listing |
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