EUV and soft X-ray-induced photofragmentation of the halothane (CFCHBrCl) molecule has been investigated using time-of-flight mass spectrometry in the coincidence mode (PEPICO) covering the valence region and vicinity of the bromine 3d, chlorine 2p, and carbon 1s edges. Total and partial ion yields have been recorded as a function of photon energy. At lower photon energies, the heavier singly charged molecular fragments predominate in the mass spectra. On the other hand, there is a strong tendency to the atomization of the molecule at higher photon energies. Despite the different chemical environments experienced by the two carbon atoms, weak site-specific fragmentation is observed. In addition, quantum mechanical calculations at the MP2 level and a series of computations with multiconfigurational self-consistent field have been performed to describe the inner-shell states.
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http://dx.doi.org/10.1021/acs.jpca.4c04341 | DOI Listing |
RSC Adv
January 2025
Institute of Atomic and Molecular Sciences, Academia Sinica Taipei 106 Taiwan
Extreme ultraviolet (EUV) lithography is a cutting-edge technology in contemporary semiconductor chip manufacturing. Monitoring the EUV beam profiles is critical to ensuring consistent quality and precision in the manufacturing process. This study uncovers the practical use of fluorescent nanodiamonds (FNDs) coated on optical image sensors for profiling EUV and soft X-ray (SXR) radiation beams.
View Article and Find Full Text PDFJ Phys Chem A
September 2024
Instituto de Química, Universidade Federal do Rio de Janeiro (UFRJ), Ilha do Fundão, Rio de Janeiro 21949-900, RJ, Brazil.
EUV and soft X-ray-induced photofragmentation of the halothane (CFCHBrCl) molecule has been investigated using time-of-flight mass spectrometry in the coincidence mode (PEPICO) covering the valence region and vicinity of the bromine 3d, chlorine 2p, and carbon 1s edges. Total and partial ion yields have been recorded as a function of photon energy. At lower photon energies, the heavier singly charged molecular fragments predominate in the mass spectra.
View Article and Find Full Text PDFBeyond extreme ultraviolet (BEUV) lithography with a 6 × nm wavelength is regarded as a future technique to continue the pattern shirking in integrated circuit (IC) manufacturing. This work proposes an optimization method for the mask structure to improve the imaging quality of BEUV lithography. Firstly, the structure of mask multilayers is optimized to maximize its reflection coefficient.
View Article and Find Full Text PDFJ Synchrotron Radiat
May 2024
Department of Mathematical and Physical Sciences, School of Computing, Engineering and Mathematical Sciences, La Trobe University, Bundoora, Victoria 3086, Australia.
Synchrotron light sources can provide the required spatial coherence, stability and control to support the development of advanced lithography at the extreme ultraviolet and soft X-ray wavelengths that are relevant to current and future fabricating technologies. Here an evaluation of the optical performance of the soft X-ray (SXR) beamline of the Australian Synchrotron (AS) and its suitability for developing interference lithography using radiation in the 91.8 eV (13.
View Article and Find Full Text PDFStruct Dyn
March 2024
Swiss Light Source, Paul Scherrer Institute, 5232 Villigen PSI, Switzerland.
Surface acoustic waves (SAWs) are excited by femtosecond extreme ultraviolet (EUV) transient gratings (TGs) in a room-temperature ferrimagnetic DyCo alloy. TGs are generated by crossing a pair of EUV pulses from a free electron laser with the wavelength of 20.8 nm matching the Co -edge, resulting in a SAW wavelength of Λ = 44 nm.
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