Antiferromagnets are promising for nano-scale oscillator in a wide frequency range from gigahertz up to terahertz. Experimentally realizing antiferromagnetic moment oscillation via spin-orbit torque, however, remains elusive. Here, we demonstrate that the optical spin-orbit torque induced by circularly polarized laser can be used to drive free decaying oscillations with a frequency of 2 THz in metallic antiferromagnetic MnAu thin films. Due to the local inversion symmetry breaking of MnAu, ultrafast a.c. current is generated via spin-to-charge conversion, which can be detected through free-space terahertz emission. Both antiferromagnetic moments switching experiments and dynamics analyses unravel the antiferromagnetic moments, driven by optical spin-orbit torque, deviate from its equilibrium position, and oscillate back in 5 ps once optical spin-orbit torque is removed. Besides the fundamental significance, our finding opens a new route towards low-dissipation and controllable antiferromagnet-based spin-torque oscillators.
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http://dx.doi.org/10.1038/s41467-024-51440-4 | DOI Listing |
ACS Nano
December 2024
Department of Materials Science and Engineering, National University of Singapore, Singapore117575, Singapore.
A Rashba spin-splitting state with spin-momentum locking enables the charge-spin interconversion known as the Rashba effect, induced by the interplay of inversion symmetry breaking (ISB) and spin-orbit coupling (SOC). Enhancing spin-splitting strength is promising to achieve high spin-orbit torque (SOT) efficiency for low-power-consumption spintronic devices. However, the energy scale of natural ISB at the interface is relatively small, leading to the weak Rashba effect.
View Article and Find Full Text PDFNanoscale Horiz
December 2024
Electrical and Computer Engineering, The Grainger College of Engineering, University of Illinois Urbana-Champaign, Urbana, USA.
Antiferromagnetic materials have several unique properties, such as a vanishingly small net magnetization, which generates weak dipolar fields and makes them robust against perturbation from external magnetic fields and rapid magnetization dynamics, as dictated by the geometric mean of their exchange and anisotropy energies. However, experimental and theoretical techniques to detect and manipulate the antiferromagnetic order in a fully electrical manner must be developed to enable advanced spintronic devices with antiferromagnets as their active spin-dependent elements. Among the various antiferromagnetic materials, conducting antiferromagnets offer high electrical and thermal conductivities and strong electron-spin-phonon interactions.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
School of Electronic Science and Engineering, Nanjing University, Nanjing, 210023, China.
The prevailing research emphasis has been on reducing the critical switching current density (J) by enhancing the damping-like efficiency (β). However, recent studies have shown that the field-like efficiency (β) can also play a major role in reducing J. In this study, the central inversion asymmetry of Pt-Co is significantly enhanced through interface engineering at the sub-atomic layer of Ta, thereby inducing substantial alterations in the β associated with the interface.
View Article and Find Full Text PDFAdv Mater
December 2024
Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China.
Manipulating the polarization of spin current is essential for understanding the mechanism of charge-to-spin conversion and achieving efficient electrically driven magnetization switching. Here, a novel exchange-spring magnetic structure is introduced formed by the coupling of perpendicular magnetic anisotropy (PMA) CoTb and in-plane magnetic anisotropy (IMA) Co films. When a spin current with the polarization along the y-direction flows through this exchange-spring (x-z plane) structure, the interaction between the y-spin and the local exchange field with a non-collinear spatial distribution gives rise to substantial unconventional spin polarizations in the x- and z-directions, enabling field-free spin-orbit torque driven perpendicular magnetization switching at room temperature.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
Shanghai Key Laboratory of Special Artificial Microstructure Materials and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
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