AI Article Synopsis
- Robust electrical contacts are essential for the effective use of monolayer 2D semiconductors, particularly semiconducting transition metal dichalcogenides (s-TMDs), in electronics.
- This study investigates the use of bismuth semimetal contacts with monolayer MoSe, focusing on minimizing experimental uncertainties and measuring important parameters like specific resistivity and transfer length.
- Findings reveal that the resistivity of MoSe at the contacts increases due to charge transfer, but there is a discrepancy between theoretical models and experimental measurements, indicating that new theoretical methods are needed.
Article Abstract
Achieving robust electrical contacts is crucial for realizing the promise of monolayer 2D semiconductors such as semiconducting transition metal dichalcogenides (s-TMDs) in electronics. Despite recent breakthroughs, a gap remains between the experimental and theoretical understanding of metal-s-TMDs contacts. This study explores bismuth semimetal contacts to monolayer MoSe, using a platform that minimizes experimental sources of uncertainty; we combine contact-front and contact-end measurements to measure key parameters like specific resistivity (ρ) and transfer length (). We find that the resistivity of MoSe under the contacts is enhanced due to charge transfer that can be modeled using a self-consistent approach. In contrast, calculations of the interlayer charge transfer rate are inconsistent with the measured value of ρ, highlighting the need for new theoretical approaches.
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| http://dx.doi.org/10.1021/acs.nanolett.4c02586 | DOI Listing |
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