High-performance electrolyte-gated amorphous InGaZnO field-effect transistor for label-free DNA sensing.

Bioelectrochemistry

Guangdong Provincial Key Laboratory of New Energy Materials Service Safety, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China. Electronic address:

Published: December 2024

Accurate, convenient, label-free, and cost-effective biomolecules detection platforms are currently in high demand. In this study, we showcased the utilization of electrolyte-gated InGaZnO field-effect transistors (IGZO FETs) featuring a large on-off current ratio of over 10 and a low subthreshold slope of 78.5 mV/dec. In the DNA biosensor, the modification of target DNA changed the effective gate voltage of IGZO FETs, enabling an impressive low detection limit of 0.1 pM and a wide linear detection range from 0.1 pM to 1 μM. This label-free detection method also exhibits high selectivity, allowing for the discrimination of single-base mismatch. Furthermore, the reuse of gate electrodes and channel films offers cost-saving benefits and simplifies device fabrication processes. The electrolyte-gated IGZO FET biosensor presented in this study shows great promise for achieving low-cost and highly sensitive detection of various biomolecules.

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http://dx.doi.org/10.1016/j.bioelechem.2024.108794DOI Listing

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