Accurate, convenient, label-free, and cost-effective biomolecules detection platforms are currently in high demand. In this study, we showcased the utilization of electrolyte-gated InGaZnO field-effect transistors (IGZO FETs) featuring a large on-off current ratio of over 10 and a low subthreshold slope of 78.5 mV/dec. In the DNA biosensor, the modification of target DNA changed the effective gate voltage of IGZO FETs, enabling an impressive low detection limit of 0.1 pM and a wide linear detection range from 0.1 pM to 1 μM. This label-free detection method also exhibits high selectivity, allowing for the discrimination of single-base mismatch. Furthermore, the reuse of gate electrodes and channel films offers cost-saving benefits and simplifies device fabrication processes. The electrolyte-gated IGZO FET biosensor presented in this study shows great promise for achieving low-cost and highly sensitive detection of various biomolecules.
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http://dx.doi.org/10.1016/j.bioelechem.2024.108794 | DOI Listing |
ACS Appl Mater Interfaces
January 2025
School of Electrical Engineering, Kookmin University, Seoul 02707, Republic of Korea.
In this study, we analyze the characteristics of fast transient drain current () in IGZO-based field-effect transistors (FETs) with different composition ratios (device O: ratio of 1:1:1 for In, Ga, Zn, device G: ratio of 0.307:0.39:0.
View Article and Find Full Text PDFSci Rep
December 2024
School of Electrical Engineering, Kookmin University, Seoul, 02707, Republic of Korea.
This study optimizes V and ΔV in amorphous indium-gallium-zinc-oxide (a-IGZO) field-effect transistors (FETs) by examining the influence of both channel length (L) and Ga composition. It was observed that as the ratio of In: Ga: Zn changed from 1:1:1 to 0.307:0.
View Article and Find Full Text PDFAdv Sci (Weinh)
November 2024
Department of Physics, Dongguk University, Seoul, 04620, Republic of Korea.
In this study, the first noncontact and non-destructive methodology is developed for monitoring and imaging the operation and performance of thin-film field-effect transistors (TFTs) using second-harmonic generation (SHG) imaging. By analyzing the SHG signal intensity, which is directly related to the electric field at the interface between the semiconductor channel and gate insulator, critical electrical parameters such as the threshold voltage (V) and flat-band voltage (V) are successfully determined. These findings demonstrate a strong correlation between SHG signals and V and V in InGaZnO TFTs under various process conditions.
View Article and Find Full Text PDFBioelectrochemistry
December 2024
Guangdong Provincial Key Laboratory of New Energy Materials Service Safety, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China. Electronic address:
Accurate, convenient, label-free, and cost-effective biomolecules detection platforms are currently in high demand. In this study, we showcased the utilization of electrolyte-gated InGaZnO field-effect transistors (IGZO FETs) featuring a large on-off current ratio of over 10 and a low subthreshold slope of 78.5 mV/dec.
View Article and Find Full Text PDFMicromachines (Basel)
May 2024
Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology, Shanghai University, Shanghai 201800, China.
In this paper, the effect of a buffer layer created using different hydrogen-containing ratios of reactive gas on the electrical properties of a top-gate In-Ga-Zn-O thin-film transistor was thoroughly investigated. The interface roughness between the buffer layer and active layer was characterized using atomic force microscopy and X-ray reflection. The results obtained using Fourier transform infrared spectroscopy show that the hydrogen content of the buffer layer increases with the increase in the hydrogen content of the reaction gas.
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