Halide perovskites (HPs) based memristors show great potential in the simulation of biological neurons. Herein, a memristor with Ag/PMMA&CsPbCl/ITO structure is developed by incorporating CsPbCl nanocrystals (NCs) into poly(methyl methacrylate) (PMMA) as the functional layer. The device exhibits typical bipolar resistive behavior, low operating voltage, good endurance of more than 400 cycles, consistent and excellent ON/OFF ratio (≈ 10), and high mechanical bending stability (bending times = 1000). The RS mechanism has been well explained by the electric field induced formation and rupture of Ag filaments in the PMMA&CsPbCl layer. More importantly, the memristor successfully displays fundamental nociceptive functions including threshold, nonadaptation, relaxation, and sensitization (allodynia and hyperalgesia). To demonstrate the feasibility of the artificial nociceptor, a pressure nociceptor system is constructed using the Ag/PMMA&CsPbCl/ITO device. These results provide new perspectives for the development of next-generation, high-performance HPs based neural morphology devices.
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