AI Article Synopsis

  • The study investigates the impact of incorporating silver nanoparticles (AgNPs) at the interface of p-Si and MAPbI3 perovskite in photodiodes, a topic that has been rarely explored previously.
  • Results show that the inclusion of AgNPs significantly enhances photoresponsivity, achieving up to a 10.6-fold increase, except in certain wavelengths where AgNPs strongly absorb light.
  • Additionally, devices with AgNPs demonstrate substantially faster photo response times, with improvements of around 7.9 times for rise and fall times, suggesting a new method for efficient weak light detection.

Article Abstract

Although enhanced performances of photovoltaic devices by embedding metal nanoparticals in charge transport layer, doping into active layer bulk, decorating the active layer surface, and inserting at the interface between semiconductor and the electrode were reported, the effect of incorporating metal NPs at the interface of single crystal semiconductor and perovskite is rarely tackled. Herein the effects of incorporating Ag nanoparticals (AgNPs) at p-Si/MAPbI3 perovskite interface on the photodiode performances were investigated. The results showed that compared with reference device (without AgNPs) the photoresponsivity of the device incorporating AgNPs is greatly improved with the exception for light with wavelengths fall in the spectral range where AgNPs have strong optical absorption. This effect is extremely significant for relatively shorter wavelengths in visible region, and a maximal improvement of around 10.6 times in photoresponsivity was achieved. The physical origin of the exception for spectral range that AgNPs have strong optical absorption is the cancelation of scatter resulted enhancement through AgNPs by band-to-band absorption resulted reduction of photocurrent, in which the generated electron has energy near the fermi level and the hole has large effective mass, which relax by nonradiative recombination, thus making not contribution to the photocurrent. More importantly, the AgNP decorated device showed much faster photo response speed than reference device, and a maximal improvement of around 7.9 times in rise and fall time was achieved. These findings provide a novel approach for high responsive and high speed detection for weak light.

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Source
http://dx.doi.org/10.1088/1361-6528/ad6dfdDOI Listing

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