In this study, we investigate the impact of two-dimensional MoS coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS coating, yielding luminescence intensity comparable to that from a QW capped by an AlGaN barrier. Our results demonstrate that MoS, despite its quite different nature from III-nitride semiconductors, acts as an effective barrier for surface GaN QWs and suppresses spatially localized intrinsic surface states. This finding provides novel pathways for efficient III-nitride surface passivation.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11342355 | PMC |
| http://dx.doi.org/10.1021/acs.nanolett.4c02259 | DOI Listing |
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