The tuneability of the localized surface plasmon resonance (LSPR) of degenerately doped metal oxide (MOX) nanocrystals (NCs) over a wide range of the infrared (IR) region by controlling NC size and doping content offers a unique opportunity to develop a future generation of optoelectronic and photonic devices like IR photodetectors and sensors. The central aim of this review article is to highlight the distinctive and remarkable plasmonic properties of degenerately or heavily doped MOX nanocrystals by reviewing the comprehensive literature reported so far. In particular, the literature of each MOX NC, ZnO, CdO, InO, and WO doped with different dopants, is discussed separately. In addition to discussion of the most commonly used colloidal synthesis approaches, the ultrafast dynamics of charge carriers in NCs and the extraction of LSPR-assisted hot-carriers are also discussed in detail. Finally, future prospective applications of MOX NCs in IR photodetectors and photovoltaic (PV) self-powered chemical sensors are also presented.
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http://dx.doi.org/10.1039/d4ma00426d | DOI Listing |
ACS Appl Mater Interfaces
January 2025
College of Material, Chemistry and Chemical Engineering, Hangzhou Normal University, Hangzhou 311121, P. R. China.
Thermoelectric technology enables the direct and reversible conversion of heat into electrical energy without air pollution. Herein, the stability, electronic structure, and thermoelectric properties of methoxy-functionalized MC(OMe) (M = Sc, Ti, V, Cr, Y, Zr, Nb, Mo, Hf, Ta, and W) were systematically investigated using first-principles calculations and semiclassical Boltzmann transport theory. All MXenes, except those with M = Cr, Mo, and W, can be synthesized by substituting Cl- and Br-functionalized MXenes with deprotonated methanol, with stability governed by the M-O bond strength.
View Article and Find Full Text PDFACS Nano
December 2024
Department of Materials Science and Engineering, Ulsan National Institute of Science and Technology, Ulsan 44919, Republic of Korea.
With reduced dimensionality and a high surface area-to-volume ratio, two-dimensional (2D) semiconductors exhibit intriguing electronic properties that are exceptionally sensitive to surrounding environments, including directly interfacing gate dielectrics. These influences are tightly correlated to their inherent behavior, making it critical to examine when extrinsic charge carriers are intentionally introduced to the channel for complementary functionality. This study explores the physical origin of the competitive transition between intrinsic and extrinsic charge carrier conduction in extrinsically -doped MoS, highlighting the central role of interactions of the channel with amorphous gate dielectrics.
View Article and Find Full Text PDFMater Horiz
December 2024
Walter Schottky Institute, Technical University of Munich, 85748 Garching, Germany.
Semiconducting ternary nitrides are a promising class of materials that have received increasing attention in recent years, but often show high free electron concentrations due to the low defect formation energies of nitrogen vacancies and substitutional oxygen, leading to degenerate n-type doping. To achieve non-degenerate behavior, we now investigate a family of amorphous calcium-zinc nitride (Ca-Zn-N) thin films. By adjusting the metal cation ratios, we demonstrate band gap tunability between 1.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
Department of Materials Science and Engineering, Stanford University, Stanford, CA, 94305, USA.
The unique layer-stacking in two-dimensional (2D) van der Waals materials facilitates the formation of nearly degenerate phases of matter and opens novel routes for the design of low-power, reconfigurable functional materials. Electrochemical ion intercalation between stacked layers offers a promising approach to stabilize bulk metastable phases and to explore the effects of extreme carrier doping and strain. However, in situ characterization methods to study the structural evolution and dynamical functional properties of these intercalated materials remains limited.
View Article and Find Full Text PDFNanophotonics
April 2024
Dipartimento di Scienze, Università; degli Studi Roma Tre, Viale G. Marconi 446, Roma 00146, Italy.
A parabolic potential that confines charge carriers along the growth direction of quantum wells semiconductor systems is characterized by a single resonance frequency, associated to intersubband transitions. Motivated by fascinating quantum optics applications leveraging on this property, we use the technologically relevant SiGe material system to design, grow, and characterize n-type doped parabolic quantum wells realized by continuously grading Ge-rich Si Ge alloys, deposited on silicon wafers. An extensive structural analysis highlights the capability of the ultra-high-vacuum chemical vapor deposition technique here used to precisely control the quadratic confining potential and the target doping profile.
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