AI Article Synopsis
- Highly efficient silicon-based light emission is essential for developing optoelectronic integrated chips, and this research demonstrates a significant enhancement in green electroluminescence (EL) using oxygen-doped silicon nitride (SiN:O) paired with a silver (Ag) nanocavity array.
- The study shows that the green EL from the SiN:O combined with the Ag nanocavity array can increase up to 7.1 times compared to a pure SiNO device, with a 3-fold improvement in external quantum efficiency for specific nanocavity diameters.
- The findings suggest that the localized surface plasmon resonance of the tunable Ag nanocavity arrays with SiN:O films is crucial for achieving
Article Abstract
As the driving source, highly efficient silicon-based light emission is urgently needed for the realization of optoelectronic integrated chips. Here, we report that enhanced green electroluminescence (EL) can be obtained from oxygen-doped silicon nitride (SiN:O) films based on an ordered and tunable Ag nanocavity array with a high density by nanosphere lithography and laser irradiation. Compared with that of a pure SiNO device, the green electroluminescence (EL) from the SiN:O/Ag nanocavity array device can be increased by 7.1-fold. Moreover, the external quantum efficiency of the green electroluminescence (EL) is enhanced 3-fold for SiN:O/Ag nanocavity arrays with diameters of 300 nm. The analysis of absorption spectra and the FDTD calculation reveal that the localized surface plasmon (LSP) resonance of size-controllable Ag nanocavity arrays and SiN:O films play a key role in the strong green EL. Our discovery demonstrates that SiN:O films coupled with tunable Ag nanocavity arrays are promising for silicon-based light-emitting diode devices of the AI period in the future.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11313910 | PMC |
| http://dx.doi.org/10.3390/nano14151306 | DOI Listing |
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