AI Article Synopsis
- Recent advancements in piezoelectric and ferroelectric wurtzite materials, particularly Sc doped AlN (Al ScN), show potential for improving microelectronics by integrating with existing semiconductor technology.
- Conventional sputtering methods produce polycrystalline Al ScN films with high leakage current, prompting research into alternative deposition techniques.
- The use of pulsed laser deposition resulted in high-quality single crystalline Al ScN films, achieving a significant piezoelectric coefficient and switchable polarization, making it ideal for future applications in RF filters and nonvolatile memory devices.*
Article Abstract
Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics because they can be easily integrated with mainstream semiconductor technology. Sc doped AlN (Al ScN) has attracted much attention for its enhanced piezoelectric and emerging ferroelectric properties, yet the commonly used sputtering results in polycrystalline Al ScN films with high leakage current. Here, the pulsed laser deposition of single crystalline epitaxial Al ScN thin films on sapphire and 4H-SiC substrates is reported. Pure wurtzite phase is maintained up to x = 0.3 with ≤0.1 at% oxygen contamination. Polarization is estimated to be 140 µC cm via atomic scale microscopy imaging and found to be switchable via a scanning probe. The piezoelectric coefficient is found to be five times of the undoped one when x = 0.3, making it desirable for high-frequency radiofrequency (RF) filters and 3D nonvolatile memories.
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| http://dx.doi.org/10.1002/smtd.202400722 | DOI Listing |
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