Developing self-powered and flexible optoelectronic sensors with high responsivity and speed is crucial for modern applications, motivating continuous efforts to enhance their performance. Flexo-phototronics is a less-explored but promising technique to elevate the performance of optoelectronics. Therefore, this work addresses the potential of utilizing the flexo-phototronic effect to enhance the performance of a flexible and self-powered ultraviolet photodetector (UV PD) based on ZnAl:LDH (layered double hydroxides) nanosheets (Ns)/NiO heterostructure. The vertically oriented ZnAl:LDH Ns are synthesized via a simple method involving the immersion of a sputtered 10% Al-doped ZnO thin film in deionized water at room ambient conditions. The fabricated PD exhibits an impressive response to 365 nm UV light, with high sensitivity in the order of 10. The device's photocurrent and responsivity are significantly enhanced by the flexo-phototronic effect, attributed to the flexoelectric properties of ZnAl:LDH Ns. Specifically, applying an inhomogeneous tensile strain of 2% boosted the device responsivity by 57.1% and improved its operational speed. Furthermore, a working model revealing the altered energy-band structure is demonstrated to elucidate the flexo-phototronic-induced boost in the photoresponse. The PD also demonstrated a sustainable performance under severe bending cycles, underlining the good flexibility of the device. The results presented in this study demonstrate a self-powered and flexible UV PD and provide a viable approach to augment the performance of optoelectronics through the flexo-phototronic effect.
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http://dx.doi.org/10.1021/acsami.4c05210 | DOI Listing |
In this work, a planar structured GaN/CuI heterojunction ultraviolet photodetector (UVPD) with a self-powered manner was constructed by the spin-coating method. Both UVA and UVC waveband lights were precisely detected by this designed GaN/CuI PD. Irradiated upon 365 nm UVA light, our PD device performed decent self-powered photoresponse properties with a photo-to-dark current ratio (PDCR) of 1.
View Article and Find Full Text PDFAdv Sci (Weinh)
December 2024
State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
Photoelectric conversion in ferroelectric crystals can support many important applications in modern on-chip technology, but suffering from two problems, low responsive current and narrow responsive range. Especially, wide-gap ferroelectric oxides are only active at short-wavelength ultraviolet region with weak photocurrent at nanoampere levels. Here, a bifunctional design strategy of ferroelectric-order and electronic-band to improve the photocurrent and extend the responsive range simultaneously, is proposed.
View Article and Find Full Text PDFSensors (Basel)
December 2024
School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China.
Ultraviolet (UV) photodetectors (PDs) are characterized by wide wavelength selectivity and strong anti-interference capability. The focus of research is not only limited to the adjustment of the structure composition, but it also delves deeper into its working mechanism and performance optimization. In this study, a heterojunction self-powered photodetector with a unique honeycomb structure was successfully constructed by combining the advantages of two semiconductor materials, zinc oxide (ZnO) and nickel oxide (NiO), using magnetron sputtering and hydrothermal synthesis.
View Article and Find Full Text PDFNanomaterials (Basel)
November 2024
School of Information Science and Technology, Fudan University, Shanghai 200433, China.
Though much progress has been achieved in the discovery of new molecular ferroelectrics in recent years, practical applications and related physics are still rarely explored due to the difficulty in high-quality film production and patterning issues. Single-crystalline films and patterns are in high demand for high device performance. Through a template-assisted space-confined strategy, herein, ordered single-crystalline nanowire patterns and optoelectronic devices of a semiconducting molecular ferroelectric (SMF), hexane-1,6-diammonium pentaiodobismuth (HDA-BiI), were successfully demonstrated.
View Article and Find Full Text PDFNanomaterials (Basel)
November 2024
Department of Electrical Engineering, Gachon University, Seongnam 13120, Republic of Korea.
In this study, in situ piezoelectricity was incorporated into the photoactive region to prepare a self-powered deep-ultraviolet photodetector based on a mixture of polyvinylidene fluoride (PVDF)@GaO and polyethyleneimine (PEI)/carbon quantum dots (CQDs). A ferroelectric composite layer was prepared using β-GaO as a filler, and the β-phase of PVDF was used as the polymer matrix. The strong piezoelectricity of β-PVDF can facilitate the separation and transport of photogenerated carriers in the depletion region and significantly reduce the dark current when the device is biased with an external bias, resulting in a high on/off ratio and high detection capability.
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