Correction: First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements.

Phys Chem Chem Phys

Key Laboratory of Ocean Energy Utilization and Energy Conservation of Ministry of Education, School of Energy and Power Engineering, Dalian University of Technology, Dalian, 116024, China.

Published: August 2024

Correction for 'First-principles calculations of interfacial thermal transport properties between SiC/Si substrates and compounds of boron with selected group V elements' by Zhehao Sun , 2019, , 6011-6020, https://doi.org/10.1039/C8CP07516F.

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http://dx.doi.org/10.1039/d4cp90137aDOI Listing

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