AI Article Synopsis
- A coupled distributed feedback (DFB) laser system using AlGaAs/GaAs semiconductor is developed, emitting light near 820 nm and utilizing a shared Bragg grating for dual-frequency operation.
- The system achieved dual-mode operation with a 4.2 nm wavelength difference, resulting in a 1.86 THz beat frequency and producing 14.7 mW output power at a current of 195 mA.
- This new design simplifies the manufacturing process for dual-mode DFB lasers and enhances compatibility with high-frequency photodetectors, while potentially allowing for tunable beat frequencies.
Article Abstract
We present a coupled distributed feedback (DFB) laser system, based on AlGaAs/GaAs epitaxially grown compound semiconductor, with electroluminescence near 820 nm. This DFB laser system supports two lateral modes sharing a Bragg grating, thereby enabling simultaneous lasing operation at two different frequencies. We recorded a dual-mode operation with a 4.2 nm wavelength spacing, corresponding to a 1.86 THz beat frequency, and an output power of 14.7 mW at an injection current of 195 mA. Compared to previous works on dual-mode DFB lasers, this design simplifies the fabrication process, potentially enables tunability of the beat frequency, and offers greater compatibility with low temperature grown GaAs (LT-GaAs) high-frequency photodetectors.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1364/OL.530574 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Want AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!