AI Article Synopsis
- Phase-change materials like Ge-Sb-Te (GST) are used in PCRAM but face limitations due to a low ON/OFF ratio and high energy requirements for resetting.
- This study presents CrN, a phase-change nitride that offers a significant improvement, achieving an ON/OFF ratio over 10 and reducing RESET energy needs by tenfold compared to GST.
- CrN also demonstrates a rapid phase transition through the Soret effect, making it a promising candidate for next-generation PCRAM with fast operation and low energy consumption.
Article Abstract
Phase-change materials such as Ge-Sb-Te (GST) exhibiting amorphous and crystalline phases can be used for phase-change random-access memory (PCRAM). GST-based PCRAM has been applied as a storage-class memory; however, its relatively low ON/OFF ratio and the large Joule heating energy required for the RESET process (amorphization) significantly limit the storage density. This study proposes a phase-change nitride, CrN, with a much wider programming window (ON/OFF ratio more than 10) and lower RESET energy (one order of magnitude reduction from GST). High-resolution transmission electron microscopy revealed a phase-change from the low-resistance cubic CrN phase into the highly resistive hexagonal CrN phase induced by the Soret-effect. The proposed phase-change nitride could greatly expand the scope of conventional phase-change chalcogenides and offer a strategy for the next-generation of PCRAM, enabling a large ON/OFF ratio (∼10), low switching energy (∼100 pJ), and fast operation (∼30 ns).
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11328172 | PMC |
| http://dx.doi.org/10.1021/acsnano.4c03574 | DOI Listing |
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