AI Article Synopsis

  • Spiro-OMeTAD doped with lithium-bis(trifluoromethylsulfonyl)-imide and butyl-pyridine is commonly used as a hole transport layer in perovskite solar cells but suffers from stability issues.
  • Two covalent organic frameworks (BPTA-TAPD-COF and BPTA-TAPD-COF@TCNQ) were developed and incorporated into the Spiro-OMeTAD for better performance.
  • The addition of these frameworks improves charge-carrier extraction, enhances stability, and achieves a power conversion efficiency of 24.68% under harsh conditions.

Article Abstract

Spiro-OMeTAD doped with lithium-bis(trifluoromethylsulfonyl)-imide (Li-TFSI) and butyl-pyridine (-BP) is widely used as a hole transport layer (HTL) in n-i-p perovskite solar cells (PSCs). Spiro-OMeTAD based PSCs typically show poor stability owing to the agglomeration of Li-TFSI, the migration of lithium ions (Li), and the existence of potential mobile defects originating from the perovskite layer. Thus, it is necessary to search for a strategy that suppresses the degradation of PSCs and overcomes the Shockley Queisser efficiency limit via harvesting excess energy from hot charge carrier. Herein, two covalent organic frameworks (COFs) including BPTA-TAPD-COF and a well-defined donor-acceptor COF (BPTA-TAPD-COF@TCNQ) were developed and incorporated into Spiro-OMeTAD HTL. BPTA-TAPD-COF and BPTA-TAPD-COF@TCNQ could act as multifunctional additives of Spiro-OMeTAD HTL, which improve the photovoltaic performance and stability of the PSC device by accelerating charge-carrier extraction, suppressing the Li migration and Li-TFSI agglomeration, and capturing mobile defects. Benefiting from the increased conductivity, the addition of BPTA-TAPD-COF@TCNQ in the device led to the highest power conversion efficiency of 24.68% with long-term stability in harsh conditions. This work provides an example of using COFs as additives of HTL to enable improvements of both efficiency and stability for PSCs.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11273455PMC
http://dx.doi.org/10.1021/acscentsci.4c00416DOI Listing

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