AI Article Synopsis
- Selective-area epitaxy (SAE) is a technique used to create specific shapes of thin films on pre-patterned substrates, allowing for precise control over the growth of materials.
- This study successfully demonstrates the growth of Hall-bars and nanowires from bulk-insulating topological insulators (TIs) using SAE, which had not been reported before in this context.
- The newly created TI nanostructures exhibit excellent transport properties and quantum behaviors, presenting opportunities for scalable fabrication of advanced topological devices.
Article Abstract
Selective-area epitaxy (SAE) is a useful technique to grow epitaxial films with a desired shape on a prepatterned substrate. Although SAE of patterned topological-insulator (TI) thin films has been performed in the past, there has been no report of SAE-grown TI structures that are bulk-insulating. Here we report the successful growth of Hall-bars and nanowires of bulk-insulating TIs using the SAE technique. Their transport properties show that the quality of the selectively grown structures is comparable to that of bulk-insulating TI films grown on pristine substrates. In SAE-grown TI nanowires, we were able to observe Aharonov-Bohm-like magnetoresistance oscillations that are characteristic of the quantum-confined topological surface states. The availability of bulk-insulating TI nanostructures via the SAE technique opens the possibility to fabricate intricate topological devices in a scalable manner.
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| http://dx.doi.org/10.1021/acsami.4c06146 | DOI Listing |
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