Activity-dependent modulations of N-methyl-D-aspartate glutamate receptor (NMDAR) trapping at synapses regulate excitatory neurotransmission and shape cognitive functions. Although NMDAR synaptic destabilization has been associated with severe neurological and psychiatric conditions, tuning NMDAR synaptic trapping to assess its clinical relevance for the treatment of brain conditions remains a challenge. Here, we report that ketamine (KET) and other clinically relevant NMDAR open channel blockers (OCBs) promote interactions between NMDAR and PDZ-domain-containing scaffolding proteins and enhance NMDAR trapping at synapses. We further show that KET-elicited trapping enhancement compensates for depletion in synaptic receptors triggered by autoantibodies from patients with anti-NMDAR encephalitis. Preventing synaptic depletion mitigates impairments in NMDAR-mediated CaMKII signaling and alleviates anxiety- and sensorimotor-gating-related behavioral deficits provoked by autoantibodies. Altogether, these findings reveal an unexpected dimension of OCB action and stress the potential of targeting receptor anchoring in NMDAR-related synaptopathies.
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http://dx.doi.org/10.1016/j.neuron.2024.06.028 | DOI Listing |
Curr Biol
January 2025
Department of Neuroscience, Physiology & Pharmacology, UCL, Gower Street, London WC1E 6BT, UK. Electronic address:
Animals construct diverse behavioral repertoires by moving a limited number of body parts with varied kinematics and patterns of coordination. There is evidence that distinct movements can be generated by changes in activity dynamics within a common pool of motoneurons or by selectively engaging specific subsets of motoneurons in a task-dependent manner. However, in most cases, we have an incomplete understanding of the patterns of motoneuron activity that generate distinct actions and of how upstream premotor circuits select and assemble such motor programs.
View Article and Find Full Text PDFACS Appl Mater Interfaces
January 2025
School of Information Science and Technology, Fudan University, Shanghai 200433, China.
To date, various kinds of memristors have been proposed as artificial neurons and synapses for neuromorphic computing to overcome the so-called von Neumann bottleneck in conventional computing architectures. However, related working principles are mostly ascribed to randomly distributed conductive filaments or traps, which usually lead to high stochasticity and poor uniformity. In this work, a heterostructure with a two-dimensional WS monolayer and a ferroelectric PZT film were demonstrated for memristors and artificial synapses, triggered by in-plane ferroelectric polarization.
View Article and Find Full Text PDFACS Nano
January 2025
School of Electrical Engineering, Korea University, Seoul 02841, Korea.
Artificial synapses for neuromorphic computing have been increasingly highlighted, owing to their capacity to emulate brain activity. In particular, solid-state electrolyte-gated electrodes have garnered significant attention because they enable the simultaneous achievement of outstanding synaptic characteristics and mass productivity by adjusting proton migration. However, the inevitable interface traps restrict the protons at the channel-electrolyte interface, resulting in the deterioration of synaptic characteristics.
View Article and Find Full Text PDFLight Sci Appl
January 2025
Electrical and Computer Engineering Program, Computer Electrical Mathematical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, Saudi Arabia.
Advancements in neuromorphic computing have given an impetus to the development of systems with adaptive behavior, dynamic responses, and energy efficiency characteristics. Although charge-based or emerging memory technologies such as memristors have been developed to emulate synaptic plasticity, replicating the key functionality of neurons-integrating diverse presynaptic inputs to fire electrical impulses-has remained challenging. In this study, we developed reconfigurable metal-oxide-semiconductor capacitors (MOSCaps) based on hafnium diselenide (HfSe).
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
Department of IT & Semiconductor Convergence Engineering, Tech University of Korea, Siheung 15073, Republic of Korea.
This study presents the fabrication and characterization of a dual-functional Pt/GaO/Pt optoelectronic synaptic device, capable of operating as both a memristor and a memcapacitor. We detail the optimized radio frequency (RF) sputtering parameters, including a base pressure of 8.7 × 10 Torr, RF power of 100 W, working pressure of 3 mTorr, and the use of high-purity GaO and Pt targets.
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