Investigation on Luminescence Properties of Dy Ions Doped NaBaBO Phosphors for Optoelectronic Applications.

A series of Dy ions doped NaBaBO phosphors with different dopant concentration was synthesized by solid state reaction. The phase purity was checked by X-ray diffraction analysis and the functional groups present in as prepared phosphors was investigated with the help of FTIR spectral analysis. Under 386 nm excitation, the photoluminescence spectra exhibit three emission bands around 482 nm, 574 nm and 664 nm due to F→H (J = 15, 13, 11) transions respectively. The optimum doping concentration of Dy ions was found to be 5 mol%. The color coordinates are estimated from the emission spectra to check the dominant emission color and the color coordinates of the studied phosphors are fall on white region of CIE 1931 diagram. The decay curve analysis was made to determine the lifetime of excited state of Dy ions and the decay curves are exhibited bi-exponential behavior irrespective of Dy ion concentration. All these measurents are done in room temperature and the results obtained from these studies are discussed in detail to claim their usage in light emitting devices.