AI Article Synopsis

  • Triarylamine–fluorene (TAF) copolymers, previously under-researched for planarization, have been shown to enhance electronic and transport properties when compared to their conventional twisted variants.
  • Planarization results in trap-free hole transport and increased mobility, particularly in undoped states, while also slightly reducing the ionization energy and adjusting the work function.
  • The study further reveals new behaviors in TAF polymers, including the formation of polaron bands upon doping and a peak in electrical conductivity at a specific doping level, which supports their effective use in organic semiconductor diodes as hole injection layers.

Article Abstract

Triarylamine--fluorene (TAF) copolymers are widely used for hole injection and transport in organic electronics. Despite suggestions to planarize the triphenylamine moiety, little research has been conducted. Here, we report a comprehensive investigation of the effects of planarization on the electronic and transport properties of a model TAF polymer semiconductor core. We compared the conventional twisted-propeller -4-methoxyphenyl-,-diphenylamine-4',4″-diyl (TA) unit and its planarized bridged analogue (bTA) where adjacent ,'-positions are linked by 1,1-dimethylmethylene. We studied both polyelectrolyte and non-polyelectrolyte forms of this core in both doped and undoped states. We found that planarization leads to an unprecedented trap-free transport of holes, and a pronounced enhancement of their mobility in the undoped state though less so in the doped state. Planarization also induces a slight reduction in the ionization energy of the undoped polymer, consequently lowering the work function of the doped polymer. This is accompanied by small spectral shifts: a red shift in the first absorption band of the undoped polymer and a blue shift in the first absorption band of the polaron. Furthermore, this study unveils new fundamental features of TAF polymers: (i) Doping induces the formation of three polaron bands within the subgap. (ii) Absorption of both neutral and polaron segments exhibit a linear intensity relationship with doping level. (iii) Electrical conductivity reaches a maximum at the half-doped state, varying as σ ∼ ( (1 - )) for 0.1 ≲ ≲ 0.9, where is the doping level. Finally, we demonstrate the successful integration of these self-compensated hole-doped TAF polymers as efficient hole injection layers in organic semiconductor diodes.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11299140PMC
http://dx.doi.org/10.1021/acsami.4c05254DOI Listing

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