AI Article Synopsis

  • Lithium polysulfide in Li-S batteries has slow reaction rates and shuttle effects, hindering performance in applications like electric vehicles.
  • A new electrocatalyst combining metal (MoS) and semiconductor (SnS) materials is developed to enhance reaction kinetics and prevent lithium polysulfide dissolution.
  • This design shows promising results, achieving high specific capacities and stability in practical tests, offering an innovative approach to improving polysulfide catalysts.

Article Abstract

The slow reaction kinetics and severe shuttle effect of lithium polysulfide make Li-S battery electrochemical performance difficult to meet the demands of large electronic devices such as electric vehicles. Based on this, an electrocatalyst constructed by metal phase material (MoS) and semiconductor phase material (SnS) with ohmic contact is designed for inhibiting the dissolution of lithium polysulfide with improving the reaction kinetics. According to the density-functional theory calculations, it is found that the heterostructured samples with ohmic contacts can effectively reduce the reaction-free energy of lithium polysulfide to accelerate the sulfur redox reaction, in addition to the excellent electron conduction to reduce the overall activation energy. The metallic sulfide can add more sulfophilic sites to promote the capture of polysulfide. Thanks to the ohmic contact design, the carbon nanotube-MoS-SnS achieved a specific capacity of 1437.2 mAh g at 0.1 C current density and 805.5 mAh g after 500 cycles at 1 C current density and is also tested as a pouch cell, which proves to be valuable for practical applications. This work provides a new idea for designing an advanced and efficient polysulfide catalyst based on ohmic contact.

Download full-text PDF

Source
http://dx.doi.org/10.1002/smll.202403871DOI Listing

Publication Analysis

Top Keywords

ohmic contact
16
lithium polysulfide
12
reaction kinetics
8
phase material
8
current density
8
polysulfide
6
construction ohmic
4
contact
4
contact cathode
4
cathode metal
4

Similar Publications

Study on Electrical and Temperature Characteristics of β-GaO-Based Diodes Controlled by Varying Anode Work Function.

Nanomaterials (Basel)

December 2024

State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology, National Engineering Research Center of Wide Band-Gap Semiconductor, School of Microelectronics, Xidian University, Xi'an 710071, China.

This study systematically investigates the effects of anode metals (Ti/Au and Ni/Au) with different work functions on the electrical and temperature characteristics of β-GaO-based Schottky barrier diodes (SBDs), junction barrier Schottky diodes (JBSDs) and P-N diodes (PNDs), utilizing Silvaco TCAD simulation software, device fabrication and comparative analysis. From the perspective of transport characteristics, it is observed that the SBD exhibits a lower turn-on voltage and a higher current density. Notably, the V of the Ti/Au anode SBD is merely 0.

View Article and Find Full Text PDF

Highly Efficient Electrode of Dirac Semimetal PtTe for MoS-Based Field Effect Transistors.

ACS Appl Mater Interfaces

December 2024

Beijing Academy of Quantum Information Sciences, Beijing 100193, China.

Two-dimensional van der Waals (vdW) layered materials not only are an intriguing fundamental scientific research platform but also provide various applications to multifunctional quantum devices in the field-effect transistors (FET) thanks to their excellent physical properties. However, a metal-semiconductor (MS) interface with a large Schottky barrier causes serious problems for unleashing their intrinsic potentials toward the advancements in high-performance devices. Here, we show that exfoliated vdW Dirac semimetallic PtTe can be an excellent electrode for electrons in MoS FETs.

View Article and Find Full Text PDF

P-Type Vertical FETs Realized by Using Fermi-Level Pinning-Free 2D Metallic Electrodes.

Nano Lett

December 2024

SKKU Advanced Institute of Nano Technology and Department of Nano Science and Technology, Sungkyunkwan University, Suwon 16419, Republic of Korea.

In two-dimensional (2D) nanomaterial electronics, vertical field-effect transistors (VFETs), where charges flow perpendicular to the channel materials, hold promise due to the ease of forming ultrashort channel lengths by utilizing the thinness of 2D materials. However, the poor performance of p-type VFET arises from the lack of a gate-field-penetrating electrode with suitable work functions, which is essential for VFET operation. This motivated us to replace graphene (work function of ∼4.

View Article and Find Full Text PDF

Silicon heterojunction (SHJ) solar cells, as one of the most promising passivated contact solar cell technologies of the next generation, have the advantages of high conversion efficiency, high open-circuit voltage, low-temperature coefficient, and no potential-induced degradation. For the single-side rear-emitter SHJ solar cells, the n-type carrier selective layer, which serves as the light-incident side, plays a pivotal role in determining the performance of heterojunction devices. Consequently, a superior n-doped layer should exhibit high optical transmittance and minimal optical absorption, along with a substantial effective doping level to guarantee the formation of dark conductivity (σ) and electron-transport capacity.

View Article and Find Full Text PDF

The decoupling of electronic states between metals and semiconductors through controlled construction of artificial van der Waals (vdW) heterojunctions enables tailored Schottky barriers. However, the interfacial chemistry, especially involving solid-liquid interfaces, remains unexplored. Here, first principles calculations reveal unexpected strong Fermi-level pinning in various metal/MoS vdW heterojunctions with intercalated ice-like water bilayers.

View Article and Find Full Text PDF

Want AI Summaries of new PubMed Abstracts delivered to your In-box?

Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!