We present here the fabrication at the wafer level and the electrical performance of two types of graphene diodes: ballistic trapezoidal-shaped graphene diodes and lateral tunneling graphene diodes. In the case of the ballistic trapezoidal-shaped graphene diode, we observe a large DC current of 200 µA at a DC bias voltage of ±2 V and a large voltage responsivity of 2000 /, while in the case of the lateral tunneling graphene diodes, we obtain a DC current of 1.5 mA at a DC bias voltage of ±2 V, with a voltage responsivity of 3000 . An extended analysis of the defects produced during the fabrication process and their influences on the graphene diode performance is also presented.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11243634 | PMC |
| http://dx.doi.org/10.3390/nano14131114 | DOI Listing |
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