Influence of Sputtering Power on the Properties of Magnetron Sputtered Tin Selenide Films.

Materials (Basel)

Faculty of Materials Science and Ceramics, AGH University of Krakow, al. A. Mickiewicza 30, 30-059 Krakow, Poland.

Published: June 2024

AI Article Synopsis

  • The study focuses on developing ecofriendly tin selenide (SnSe) thin films for thermoelectric applications, aiming to improve their efficiency compared to polycrystalline bulk materials.
  • Using a modified direct current power supply for magnetron sputtering allows for stable deposition of SnSe films, resulting in high-quality films with a dimensionless figure of merit (ZT) value of 0.5 at 530 K.
  • The research also highlights how varying the sputtering power affects the thickness and microstructure of the films, with thermoelectric efficiency showing improvements at higher sputtering powers.

Article Abstract

The ecofriendly tin selenide (SnSe) is expected to find multiple applications in optoelectronic, photovoltaic, and thermoelectric systems. This work is focused on the thermoelectric properties of thin films. SnSe single crystals exhibit excellent thermoelectric properties, but it is not so in the case of polycrystalline bulk materials. The investigations were motivated by the fact that nanostructuring may lead to an improvement in thermoelectric efficiency, which is evaluated through a dimensionless figure of merit, ZT = S σ T/λ, where S is the Seebeck coefficient (V/K), σ is the electrical conductivity (S/m), λ is the thermal conductivity (W/mK), and T is the absolute temperature (K). The main objective of this work was to obtain SnSe films via magnetron sputtering of a single target. Instead of common radiofrequency (RF) magnetron sputtering with a high voltage alternating current (AC) power source, a modified direct current (DC) power supply was employed. This technique in the classical version is not suitable for sputtering targets with relatively low thermal and electrical conductivity, such as SnSe. The proposed solution enabled stable sputtering of this target without detrimental cracking and arcing and resulted in high-quality polycrystalline SnSe films with unprecedented high values of ZT equal to 0.5 at a relatively low temperature of 530 K. All parameters included in ZT were measured in one setup, i.e., Linseis Thin Film Analyzer (TFA). The SnSe films were deposited at sputtering powers of 120, 140, and 170 W. They had the same orthorhombic structure, as determined by X-ray diffraction (XRD), but the thickness and microstructure examined by scanning electron microscopy (SEM) were dependent on the sputtering power. It was demonstrated that thermoelectric efficiency improved with increasing sputtering power and stable values were attained after two heating-cooling cycles. This research additionally provides further insights into the DC sputtering process and opens up new possibilities for magnetron sputtering technology.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11242425PMC
http://dx.doi.org/10.3390/ma17133132DOI Listing

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