2D magnets are expected to give new insights into the fundamentals of magnetism, host novel quantum phases, and foster development of ultra-compact spintronics. However, the scarcity of 2D magnets often makes a bottleneck in the research efforts, prompting the search for new magnetic systems and synthetic routes. Here, an unconventional approach is adopted to the problem, graphenization - stabilization of layered honeycomb materials in the 2D limit. Tetragonal GdAlSi, stable in the bulk, in ultrathin films gives way to its layered counterpart - graphene-like anionic AlSi layers coupled to Gd cations. A series of inch-scale films of layered GdAlSi on silicon is synthesized, down to a single monolayer, by molecular beam epitaxy. Graphenization induces an easy-plane ferromagnetic order in GdAlSi. The magnetism is controlled by low magnetic fields, revealing its 2D nature. Remarkably, it exhibits a non-monotonic evolution with the number of monolayers. The results provide a fresh platform for research on 2D magnets by design.
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http://dx.doi.org/10.1002/smll.202402189 | DOI Listing |
Angew Chem Int Ed Engl
January 2025
Nanjing University, College of Engineering and Applied Sciences, No. 163 Xianlin Avenue, Qixia District, Nanjing, Nanjing, CHINA.
Electrolyte engineering has emerged as an effective strategy for stabilizing Zn-metal anodes. However, a single solute or solvent additive is far from sufficient to meet the requirements for electrolyte cycling stability. Here, we report a new-type high-entropy electrolyte composed of equal molar amounts of Zn(OTf)2 and LiOTf, along with equal volumes of H2O, triethyl phosphate, and dimethyl sulfoxide, which enhances electrolyte stability by increasing solvation entropy.
View Article and Find Full Text PDFNat Mater
January 2025
Department of Physics, Harvard University, Cambridge, MA, USA.
Atomically thin van der Waals (vdW) films provide a material platform for the epitaxial growth of quantum heterostructures. However, unlike the remote epitaxial growth of three-dimensional bulk crystals, the growth of two-dimensional material heterostructures across atomic layers has been limited due to the weak vdW interaction. Here we report the double-sided epitaxy of vdW layered materials through atomic membranes.
View Article and Find Full Text PDFSci Rep
January 2025
Thin Films and Nanoscience Laboratory, Department of Physics, Tripura University, Suryamaninagar, 799022, Tripura, India.
Layer-by-Layer (LbL) technique is the simplest and inexpensive method for preparartion of nano-dimensional thin films for tailoring material behavior having wide range of applications including sensors. Here, spectroscopic behavior of two laser dyes Acriflavine (Acf) and Rhodamine B (RhB) assembled onto LbL films have been investigated. It has been observed that both Acf and RhB form stable LbL films.
View Article and Find Full Text PDFNat Commun
January 2025
State Key Laboratory of Functional Crystals and Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China.
Two-dimensional (2D) materials have been identified as promising candidates for future electronic devices. However, high dielectric constant (κ) materials, which can be integrated with 2D semiconductors, are still rare. Here, we report a hydrate-assisted thinning chemical vapor deposition (CVD) technique to grow manganese oxide (MnO) single crystal nanosheets, enabled by a strategy to minimize the substrate lattice mismatch and control the growth kinetics.
View Article and Find Full Text PDFMicrosyst Nanoeng
January 2025
Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA.
Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high-frequency bands (>8 GHz) are expected to require resonators with high-quality factor (Q) and electromechanical coupling ( ) to form filters with low insertion loss and high selectivity. However, both the Q and of resonator devices formed in traditional uniform polarization piezoelectric films of aluminum nitride (AlN) and aluminum scandium nitride (AlScN) decrease when scaled beyond 8 GHz.
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