Stable and efficient CsPbI quantum-dot light-emitting diodes with strong quantum confinement.

Nat Commun

Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Science, Ningbo, Zhejiang, 315201, China.

Published: July 2024

AI Article Synopsis

  • Perovskite materials are being studied for their potential in next-gen displays, but achieving stable pure-red light emission remains a challenge.
  • Researchers developed perovskite light-emitting diodes that emit pure-red light at 628 nm with an impressive external quantum efficiency of 26.04%.
  • The success is attributed to advanced synthesis techniques that enhance the stability and charge transport of CsPbI quantum dots through the use of specific ligands.

Article Abstract

Even though lead halide perovskite has been demonstrated as a promising optoelectronic material for next-generation display applications, achieving high-efficiency and stable pure-red (620~635 nm) emission to cover the full visible wavelength is still challenging. Here, we report perovskite light-emitting diodes emitting pure-red light at 628 nm achieving high external quantum efficiencies of 26.04%. The performance is attributed to successful synthesizing strongly confined CsPbI quantum dots with good stability. The strong binding 2-naphthalene sulfonic acid ligands are introduced after nucleation to suppress Ostwald ripening, meanwhile, ammonium hexafluorophosphate exchanges long chain ligands and avoids regrowth by strong binding during the purification process. Both ligands enhance the charge transport ability of CsPbI quantum dots. The state-of-the-art synthesis of pure red CsPbI quantum dots achieves 94% high quantum efficiency, which can maintain over 80% after 50 days, providing a method for synthesizing stable strong confined perovskite quantum dots.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11228028PMC
http://dx.doi.org/10.1038/s41467-024-50022-8DOI Listing

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