Transformation of lignin to syngas can turn waste into treasure yet remains a tremendous challenge because of its naturally evolved stubborn structure. In this work, light-driven reforming of natural lignin in water for green syngas production is explored using Pt-decorated InGaN nanowires. The spectroscopic characterizations, isotope, and model compound experiments, as well as density function theory calculation, disclose that among a variety of groups including aromatic ring, -OH, -OCH, -CH with complex chemical bonds of O-H, C-H, C-C, C-O, etc., InGaN nanowires are cooperative with Pt for preferably breaking the C-O bond of the rich O-CH group in lignin to liberating ⋅CH by photogenerated holes with a minimum dissociation energy of 2.33 eV. Syngas are subsequently yielded from the continuous evolution of ⋅CH and ⋅OH from photocatalytic reforming of lignin in water. Together with the superior optoelectronic attributes of Pt-decorated InGaN nanowires, the evolution rate of syngas approaches 43.4 mol ⋅ g ⋅ h with tunable H/CO ratios and a remarkable turnover number (TON) of 150, 543 mol syngas per mol Pt. Notably, the architecture demonstrates a high light efficiency of 12.1 % for syngas generation under focused light without any extra thermal input. Outdoor test ascertains the viability of producing syngas with the only inputs of natural lignin, water, and sunlight, thus presenting a low-carbon route for synthesizing transportation fuels and value-added chemicals.
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http://dx.doi.org/10.1002/anie.202405904 | DOI Listing |
Natl Sci Rev
January 2025
Division of Advanced Materials Engineering, College of Engineering, Research Center for Advanced Materials Development (RCAMD), Jeonbuk National University (JBNU), Jeonju 54896, South Korea.
Ever-increasing demand for efficient optoelectronic devices with a small-footprinted on-chip light emitting diode has driven their expansion in self-emissive displays, from micro-electronic displays to large video walls. InGaN nanowires, with features like high electron mobility, tunable emission wavelengths, durability under high current densities, compact size, self-emission, long lifespan, low-power consumption, fast response, and impressive brightness, are emerging as the choice of micro-light emitting diodes (µLEDs). However, challenges persist in achieving high crystal quality and lattice-matching heterostructures due to composition tuning and bandgap issues on substrates with differing crystal structures and high lattice mismatches.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
January 2025
Key Laboratory for Power Machinery and Engineering of Ministry of Education, Research Center for Renewable Synthetic Fuel, School of Mechanical Engineering, Shanghai Jiao Tong University, 800 Dongchuan Road, Shanghai, 200240, China.
Solar-powered lignin reforming offers a carbon-neutral route for syngas production. This study explores a dual non-precious iron-manganese cocatalyst to simultaneously activate both C-C and C-O bonds for maximizing the utilization of various substituents of native lignin to yield syngas. The cocatalyst, integrated with InGaN nanowires on a Si wafer, affords a measurable syngas evolution rate of 42.
View Article and Find Full Text PDFNanoscale Horiz
November 2024
Faculty of Physics, St. Petersburg State University, Universitetskaya Embankment 13B, 199034 St. Petersburg, Russia.
Increasing the InN content in the InGaN compound is paramount for optoelectronic applications. It has been demonstrated in homogeneous nanowires or deliberately grown nanowire heterostructures. Here, we present spontaneous core-shell InGaN nanowires grown by molecular beam epitaxy on Si substrates at 625 °C.
View Article and Find Full Text PDFACS Nano
October 2024
Centre Energie, Matériaux et Télécommunications, Institut national de la recherche scientifique (INRS-EMT), Varennes, Québec J3X 1P7, Canada.
Ultra-dense (>4,000 pixels per inch) and highly stable full-color III-nitride nanoscale pixels are crucial for near-eye display technologies like virtual and augmented-reality glasses. In this context, InGaN-based long wavelength green microscale light-emitting diodes face major bottlenecks, such as low efficiency and inadequate wavelength stability. These challenges are associated with the presence of both nonradiative surface defects and the strain induced quantum-confined Stark effect.
View Article and Find Full Text PDFNanotechnology
September 2024
University Grenoble Alpes, Grenoble INP, CEA, IRIG, PHELIQS, NPSC, 17 av. des Martyrs, 38000 Grenoble, France.
The methodology of statistical analysis of cathodoluminescence (CL) intensity mappings on ensembles of several hundreds of InGaN/GaN nanowires (NWs) used to quantify non-radiative recombination centres (NRCs) was validated on InGaN/GaN NWs exhibiting spatially homogeneous cathodoluminescence at the scale of single NWs. Cathodoluminescence intensity variations obeying Poisson's statistics were assigned to the presence of randomly incorporated point defects acting as NRCs. Additionally, another type of NRCs, namely extended defects leading to spatially inhomogeneous cathodoluminescence intensity at the scale of single InGaN/GaN NWs are revealed by high resolution scanning transmission electron microscopy, geometrical phase analysis and two-beam diffraction conditions techniques.
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