Background: The path and interaction of leads within the cardiovascular system are influenced by various factors, including the implantation technique. Furthermore, the multifaceted composition of these leads, often comprising multiple materials, can contribute to their potential degradation and wear over time.
Objectives: Our aim was to investigate the wear of lead insulation following the removal of transvenous leads and pinpoint the regions of the lead most vulnerable to damage.
Material And Methods: We undertook a prospective analysis of patients from a single tertiary center who underwent transvenous lead explantation (TLE) between October 1, 2013, and July 31, 2015. Specifically, our examination focused on endocardial leads removed using simple screw-out and gentle traction techniques. Subsequent lead evaluations were conducted utilizing scanning electron and optical microscopes.
Results: Among the 86 patients who underwent the TLE procedure, 26 patients (30%) required the removal of 39 leads through simple traction. Inspection using scanning electron microscopy consistently indicated insulation damage across all leads. A total of 347 damaged sites were identified: 261 without lead unsealing and 86 exhibiting unsealing. Notably, the sections of the leads located within the intra-pocket area demonstrated the highest vulnerability to damage (odds ratio (OR): = 9.112, 95% confidence interval (95% CI): 3.326-24.960), whereas the intravenous regions displayed the lowest susceptibility (OR: 0.323, 95% CI: 0.151-0.694).
Conclusions: Our study reveals that all evaluated leads exhibited insulation damage, with the intra-pocket segments manifesting a notably higher prevalence of damage than the intravenous segments.
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http://dx.doi.org/10.17219/acem/186864 | DOI Listing |
Nat Commun
January 2025
Department of Physics and Arnold Sommerfeld Center for Theoretical Physics (ASC), Ludwig-Maximilians-Universität München, München, Germany.
Nat Commun
January 2025
Electronic Materials Research Laboratory & Multifunctional Materials and Structures, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, Shaanxi, China.
Multilayer ceramic capacitor as a vital core-component for various applications is always in the spotlight. Next-generation electrical and electronic systems elaborate further requirements of multilayer ceramic capacitors in terms of higher energy storage capabilities, better stabilities, environmental-friendly lead-free, etc., where these major obstacles may restrict each other.
View Article and Find Full Text PDFJ Chem Phys
January 2025
Key Laboratory of Optoelectronic Technology and System of Ministry of Education, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.
Auxetic materials hold tremendous potential for many advanced applications, but candidates are quite scarce, especially at two dimensions. Here, we focus on two-dimensional (2D) metal dichalcogenides and dihalides with the chemical formula MX2 by screening structures sharing the P4̄m2 space group among 330 MX2 compounds from the computational 2D materials database. Via high-throughput first-principles computations, 25 stable MX2 (M = Mg, Ca, Mn, Co, Ni, Cu, Zn, Ge, Cd, Sn; X = F, Cl, Br, I, O, S, Se) systems with in-plane negative Poisson's ratios (NPRs) are successfully identified.
View Article and Find Full Text PDFSmall
December 2024
Dalian National Laboratory for Clean Energy, iChEM, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian, 116023, P. R. China.
Formamidine lead iodide (FAPbI) quantum dots (QDs) have attracted great attention as a new generation of photovoltaic material due to their long carrier diffusion length, benign ambient stability, and light-harvesting ability. However, its large surface area with inherent thermodynamic instability and highly defective ionic termination are still major obstacles to fabricating high-performance devices. Herein, a metallic ion dopant is developed to post-treat FAPbI QDs immediately after their fabrication by using a metal-glutamate salt solution.
View Article and Find Full Text PDFNanomaterials (Basel)
December 2024
College of Science, Inner Mongolia University of Technology, Hohhot 010051, China.
Relaxor ferroelectric film capacitors exhibit high power density with ultra-fast charge and discharge rates, making them highly advantageous for consumer electronics and advanced pulse power supplies. The Aurivillius-phase bismuth layered ferroelectric films can effectively achieve a high breakdown electric field due to their unique insulating layer ((BiO) layer)). However, designing and fabricating Aurivillius-phase bismuth layer relaxor ferroelectric films with optimal energy storage characteristics is challenging due to their inherently stable ferroelectric properties.
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