In this paper, a novel 4H-SiC deep-trench super-junction MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a split-gate is proposed and theoretically verified by Sentaurus TCAD simulations. A deep trench filled with P-poly-Si combined with the P-SiC region leads to a charge balance effect. Instead of a full-SiC P region in conventional super-junction MOSFET, this new structure reduces the P region in a super-junction MOSFET, thus helping to lower the specific on-resistance. As a result, the figure of merit (, /) of the proposed new structure is 642% and 39.65% higher than the C-MOS and the SJ-MOS, respectively.
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| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11205682 | PMC |
| http://dx.doi.org/10.3390/mi15060684 | DOI Listing |
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