This work utilizes defect engineering, heterostructure, pyridine N-doping, and carbon supporting to enhance cobalt-nickel selenide microspheres' performance in the oxygen electrode reaction. Specifically, microspheres mainly composed of CoNiSe and CoSe heterojunction rich in selenium vacancies (V) wrapped with nitrogen-doped carbon nanotubes (p-CoNiSe/NCNT@CC) are prepared by Ar/NH radio frequency plasma etching technique. The synthesized p-CoNiSe/NCNT@CC shows high oxygen reduction reaction (ORR) performance (half-wave potential (E) = 0.878 V and limiting current density (J) = 21.88 mA cm). The J exceeds the 20 wt% Pt/C (19.34 mA cm) and the E is close to the 20 wt% Pt/C (0.881 V). It also possesses excellent oxygen evolution reaction (OER) performance (overpotential of 324 mV@10 mA cm), which even exceeds that of the commercial RuO (427 mV@10 mA cm). The density functional theory calculation indicates that the enhancement of ORR performance is attributed to the synergistic effect of plasma-induced V and the CoNiSe-CoSe heterojunction. The p-CoNiSe/NCNT@CC electrode assembled Zinc-air batteries (ZABs) show a peak power density of 138.29 mW cm, outperforming the 20 wt% Pt/C+RuO (73.9 mW cm) and other recently reported catalysts. Furthermore, all-solid-state ZAB delivers a high peak power density of 64.83 mW cm and ultra-robust cycling stability even under bending.
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http://dx.doi.org/10.1002/smtd.202400565 | DOI Listing |
Sensors (Basel)
December 2024
Department of Energy & Advanced Materials Engineering, Daejeon University, Daejeon 34520, Republic of Korea.
Plasma processes are critical for achieving precise device fabrication in semiconductor manufacturing. However, polymer accumulation during processes like plasma etching can cause chamber contamination, adversely affecting plasma characteristics and process stability. This study focused on developing a real-time sensor system for diagnosing chamber contamination by quantitatively monitoring polymer accumulation.
View Article and Find Full Text PDFMaterials (Basel)
January 2025
Faculty of Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami 090-8507, Hokkaido, Japan.
The addition of hydrogen to nitrogen facilitates the formation of nitride phases in the plasma nitriding processes of stainless steels, though it also induces the deterioration of their mechanical properties. This study presents a hydrogen-free plasma nitriding process for fabricating a nitrogen-expanded austenite phase (γ) on an AISI 316 stainless steel surface. The steel substrate was nitrided in N-Ar plasma with various gas compositions discharged by radio frequency (RF) and direct current (DC) modes.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
School of Integrative Engineering, Chung-Ang University, 84, Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea.
This study explores the effects of different passivation gases on the properties of polymers formed on aluminum (Al) sidewalls during the etching process in Al-based interconnect structures. The research compares the use of nitrogen (N) and ethylene diluted with helium (CH/He) as passivation gases, focusing on the resulting polymer's composition, thickness, and strength, as well as the levels of residual chlorine post-etch. The findings reveal that using CH leads to the formation of a thinner, weaker polymer with lower chlorine residue compared to the thicker, stronger polymer formed with N.
View Article and Find Full Text PDFMicromachines (Basel)
November 2024
School of Integrative Engineering, Chung-Ang University, 84, Heukseok-ro, Dongjak-gu, Seoul 06974, Republic of Korea.
We examined how controlling variables in a pre-metallization Ar sputter-etching process for in situ contact-hole cleaning affects the contact-hole profile, etching rate, and substrate damage. By adjusting process parameters, we confirmed that increasing plasma power lowered the DC bias but enhanced the etching rate of SiO, while increasing RF power raised both, with RF power having a more pronounced effect. Higher Ar flow rate reduced etching uniformity and slightly lowered the DC bias.
View Article and Find Full Text PDFMaterials (Basel)
December 2024
Department of Computer Information Science, Korea University, Sejong 30019, Republic of Korea.
Inductively coupled plasma-reactive etching (ICP-RIE) of InGaZnO (IGZO) thin films was studied with variations in gas mixtures of hydrochloride (HCl) and argon (Ar). The dry etching characteristics of the IGZO films were investigated according to radiofrequency bias power, gas mixing ratio, and chamber pressure. The IGZO film showed an excellent etch rate of 83.
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