Ferroelectric Order Evolution in Freestanding PbTiO Films Monitored by Optical Second Harmonic Generation.

Adv Sci (Weinh)

Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.

Published: August 2024

AI Article Synopsis

  • The demand for low-dimensional ferroelectric devices is growing, but thick substrates in epitaxial films limit further miniaturization.
  • Freestanding PbTiO (PTO) films can overcome these substrate constraints, though maintaining stability under strain and temperature is challenging.
  • Research using optical second harmonic generation (SHG) shows that freestanding PTO films exhibit both out-of-plane and in-plane polarization domains and maintain strong ferroelectric properties under specific tensile strains, along with a high Curie temperature of 630 K, paving the way for flexible and thermally stable electronic nanodevices.

Article Abstract

The demand for low-dimensional ferroelectric devices is steadily increasing, however, the thick substrates in epitaxial films impede further size miniaturization. Freestanding films offer a potential solution by eliminating substrate constraints. Nevertheless, it remains an ongoing challenge to improve the stability in thin and fragile freestanding films under strain and temperature. In this work, the structure and ferroelectric order of freestanding PbTiO (PTO) films are investigated under continuous variation of the strain and temperature using nondestructive optical second harmonic generation (SHG) technique. The findings reveal that there are both out-of-plane and in-plane domains with polarization along out-of-plane and in-plane directions in the orthorhombic-like freestanding PTO films, respectively. In contrast, only out-of-plane domains are observed in the tetragonal epitaxial PTO films. Remarkably, the ferroelectricity of freestanding PTO films is strengthened under small uniaxial tensile strain from 0% up to 1.66% and well-maintained under larger biaxial tensile strain up to 2.76% along the [100] direction and up to 4.46% along the [010] direction. Moreover, a high Curie temperature of 630 K is identified in 50 nm thick freestanding PTO films by wide-temperature-range SHG. These findings provide valuable understanding for the development of the next-generation electronic nanodevices with flexibility and thermostability.

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Source
http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11348163PMC
http://dx.doi.org/10.1002/advs.202307571DOI Listing

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