Ultrawide bandgap (UWBG) semiconductors, including GaO, diamond, Al Ga N/AlN, featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet photodetection, with applications spanning in environmental monitoring, chemical/biological analysis, industrial processes, and military technologies. Over recent decades, substantial strides in synthesizing high-quality UWBG semiconductors have facilitated the development of diverse high-performance solar-blind photodetectors (SBPDs). This review comprehensively examines recent advancements in UWBG semiconductor-based SBPDs across various device architectures, encompassing photoconductors, metal-semiconductor-metal photodetectors, Schottky photodiodes, p-n (p-i-n) photodiodes, phototransistors, etc., with a systematic introduction and discussion of their operational principles. The current state of device performance for SBPDs employing these UWBG semiconductors is evaluated across different device configurations. Finally, this review outlines key challenges to be addressed, aiming to steer future research endeavors in this critical domain.
Download full-text PDF |
Source |
|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11191133 | PMC |
| http://dx.doi.org/10.1021/acsomega.4c02897 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Ultrawide Bandgap Diamond/ε-GaO Heterojunction pn Diodes with Breakdown Voltages over 3 kV.
Nano Lett
January 2025
Zhejiang Provincial Engineering Research Center of Energy Optoelectronic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China.
Robust bipolar devices based on exclusively ultrawide bandgap (UWBG) semiconductors are highly desired for advanced power electronics. The heterojunction strategy has been a prevailing method for fabricating a bipolar device due to the lack of effective bipolar doping in the same UWBG material. Here, we demonstrate a unique heterojunction design integrating the p-type diamond and n-type ε-GaO that achieves remarkable breakdown voltages surpassing 3000 V.
View Article and Find Full Text PDFDeep-ultraviolet transparent conducting SrSnO via heterostructure design.
Sci Adv
November 2024
Department of Chemical Engineering and Materials Science, University of Minnesota-Twin Cities, Minneapolis, MN 55455, USA.
Article Synopsis
- Advancements in ultrawide bandgap (UWBG) semiconductors are crucial for high-power electronics and deep-ultraviolet (DUV) optoelectronics.
- A thin heterostructure using SrSnO/La:SrSnO/GdScO was designed to improve conductivity and transparency, achieving significant charge carrier separation and phonon-limited transport behavior.
- The research indicated room temperature mobilities between 40-140 cm²/Vs with 85% optical transparency at 300 nm, showcasing the potential of these materials for DUV semiconductor applications.
Epitaxial Growth of GaO: A Review.
Materials (Basel)
August 2024
Electrical and Computer Engineering, The University of Utah, Salt Lake City, UT 84112, USA.
Article Synopsis
- Beta-phase gallium oxide (β-GaO) is a powerful ultrawide bandgap semiconductor, ideal for advanced power electronics and ultraviolet optoelectronics, due to its high bandgap energy and critical electric field strength.
- The review discusses recent advances in growth techniques for β-GaO, such as Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition, focusing on achieving high growth rates and low defect densities.
- It emphasizes the need for understanding growth processes to improve manufacturing of high-quality epitaxial structures, serving as a vital resource for engineers and researchers in the field.
Microstructure Evolution and Electrical Behaviors for High-Performance CuO/Zr-Doped β-GaO Heterojunction Diodes.
ACS Appl Mater Interfaces
July 2024
Key Laboratory for Liquid-Solid Structural Evolution and Processing of Materials, Ministry of Education and School of Materials Science and Engineering, Shandong University, Jinan 250061, P. R. China.
Beta-gallium oxide (β-GaO) is emerging as a promising ultrawide band gap (UWBG) semiconductor, which is vital for high-power, high-frequency electronics and deep-UV optoelectronics. It is especially significant for flexible wearable electronics, enabling the fabrication of high-performance GaO-based devices at low temperatures. However, the limited crystallinity and pronounced structural defects arising from the low-temperature deposition of GaO films significantly restrict the heterojunction interface quality and the relevant electrical performance of GaO-based devices.
View Article and Find Full Text PDFRecent Progress in Solar-Blind Photodetectors Based on Ultrawide Bandgap Semiconductors.
ACS Omega
June 2024
School of Future Technology, Henan Key Laboratory of Quantum Materials and Quantum Energy, Henan University, Zhengzhou 450046, P. R. China.
Ultrawide bandgap (UWBG) semiconductors, including GaO, diamond, Al Ga N/AlN, featuring bandgaps greater than 4.4 eV, hold significant promise for solar-blind ultraviolet photodetection, with applications spanning in environmental monitoring, chemical/biological analysis, industrial processes, and military technologies. Over recent decades, substantial strides in synthesizing high-quality UWBG semiconductors have facilitated the development of diverse high-performance solar-blind photodetectors (SBPDs).
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!