Orbital currents have recently emerged as a promising tool to achieve electrical control of the magnetization in thin-film ferromagnets. Efficient orbital-to-spin conversion is required in order to torque the magnetization. Here, we show that the injection of an orbital current in a ferrimagnetic Gd_{y}Co_{100-y} alloy generates strong orbital torques whose sign and magnitude can be tuned by changing the Gd content and temperature. The effective spin-orbital Hall angle reaches up to -0.25 in a Gd_{y}Co_{100-y}/CuO_{x} bilayer compared to +0.03 in Co/CuO_{x} and +0.13 in Gd_{y}Co_{100-y}/Pt. This behavior is attributed to the local orbital-to-spin conversion taking place at the Gd sites, which is about 5 times stronger and of the opposite sign relative to Co. Furthermore, we observe a manyfold increase in the net orbital torque at low temperature, which we attribute to the improved conversion efficiency following the magnetic ordering of the Gd and Co sublattices.
Download full-text PDF |
Source |
---|---|
http://dx.doi.org/10.1103/PhysRevLett.132.236702 | DOI Listing |
Adv Mater
January 2025
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin, 53706, USA.
Unconventional spin-orbit torques arising from electric-field-generated spin currents in anisotropic materials have promising potential for spintronic applications, including for perpendicular magnetic switching in high-density memory applications. Here, all the independent elements of the spin torque conductivity tensor allowed by bulk crystal symmetries for the tetragonal conductor IrO are determined via measurements of conventional (in-plane) anti-damping torques for IrO thin films in the high-symmetry (001) and (100) orientations. It is then tested whether rotational transformations of this same tensor can predict both the conventional and unconventional anti-damping torques for IrO thin films in the lower-symmetry (101), (110), and (111) orientations, finding good agreement.
View Article and Find Full Text PDFEur Phys J C Part Fields
January 2025
Department of Physics, University of Alberta, Edmonton, AB T6G 2E1 Canada.
We analyze the angular momentum balance for a particle undergoing Thomas precession. The relationships among relativistic torque, the center of mass, and the center of inertia for a spinning particle are clarified. We show that spin precession is accompanied by orbital angular momentum precession, and present examples of the resulting out-of-plane motion.
View Article and Find Full Text PDFNano Lett
January 2025
School of Microelectronics, University of Science and Technology of China, Hefei 230026, People's Republic of China.
Spin-orbit torque (SOT) is widely considered to be a fast and robust writing scheme for magnetic random-access memories (MRAMs). However, the requirements of field-free switching and high switching efficiency are often incompatible in SOT devices, placing a critical challenge on its improvement. Here we propose that by utilizing biaxial systems the dilemma between high-efficiency and external-field-free SOT switching can be solved intrinsically.
View Article and Find Full Text PDFMater Horiz
January 2025
School of Materials Science and Engineering, Key Laboratory of Advanced Materials and Devices for Post-Moore Chips, Ministry of Education, University of Science and Technology Beijing, Beijing 100083, China.
Realizing spin-orbit torque (SOT)-driven magnetization switching offers promising opportunities for the advancement of next-generation spintronics. However, the relatively low charge-spin conversion efficiency accompanied by an ultrahigh critical switching current density () remains a significant obstacle to the further development of SOT-based storage elements. Herein, spin absorption engineering at the ferromagnet/nonmagnet interface is firstly proposed to achieve high SOT efficiency in Pt/Co/Ir trilayers.
View Article and Find Full Text PDFAdv Mater
January 2025
Department of Physics and Astronomy, Seoul National University, Seoul, 08826, South Korea.
Magnetization switching by charge current without a magnetic field is essential for device applications and information technology. It generally requires a current-induced out-of-plane spin polarization beyond the capability of conventional ferromagnet/heavy-metal systems, where the current-induced spin polarization aligns in-plane orthogonal to the in-plane charge current and out-of-plane spin current. Here, a new approach is demonstrated for magnetic-field-free switching by fabricating a van-der-Waals magnet and oxide FeGeTe/SrTiO heterostructure.
View Article and Find Full Text PDFEnter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!