Here, we characterize the photovoltage of n-Si/Au light-addressable electrodes (LAEs) over a range of solution potentials from -1 to +1 V. We find that the n-Si/Au photoelectrodes show photovoltages consistent with a semiconductor/liquid junction in contrast to a buried junction, which opposes our previous understanding of how photovoltage originates in these sensors.
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| http://dx.doi.org/10.1039/d4an00768a | DOI Listing |
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