Precursor-Confined Chemical Vapor Deposition of 2D Single-Crystalline SeTe Nanosheets for p-Type Transistors and Inverters.

Two-dimensional (2D) tellurium (Te) is emerging as a promising p-type candidate for constructing complementary metal-oxide-semiconductor (CMOS) architectures. However, its small bandgap leads to a high leakage current and a low on/off current ratio. Although alloying Te with selenium (Se) can tune its bandgap, thermally evaporated SeTe thin films often suffer from grain boundaries and high-density defects. Herein, we introduce a precursor-confined chemical vapor deposition (CVD) method for synthesizing single-crystalline SeTe alloy nanosheets. These nanosheets, with tunable compositions, are ideal for high-performance field-effect transistors (FETs) and 2D inverters. The preformation of Se-Te frameworks in our developed CVD method plays a critical role in the growth of SeTe nanosheets with high crystallinity. Optimizing the Se composition resulted in a SeTe nanosheet-based p-type FET with a large on/off current ratio of 4 × 10 and a room-temperature hole mobility of 120 cm·V·s, being eight times higher than thermally evaporated SeTe with similar composition and thickness. Moreover, we successfully fabricated an inverter based on p-type SeTe and n-type MoS nanosheets, demonstrating a typical voltage transfer curve with a gain of 30 at an operation voltage of = 3 V.