AI Article Synopsis
- - The study focuses on rhombohedral boron carbide (r-BC) as a promising material for optoelectronic and thermoelectric applications, specifically examining its growth on different faces of 4H-SiC substrates using chemical vapor deposition (CVD).
- - Researchers investigated the film-substrate interface to understand why epitaxial growth of r-BC occurs exclusively on the C-face of the substrate, using advanced techniques like high-resolution transmission electron microscopy and electron energy loss spectroscopy.
- - Findings suggest that the absence of surface roughness or carbon interlayer on both substrate types points to surface carbon accumulation as a barrier to continued epitaxial r-BC growth, as indicated by Raman spectroscopy analysis.
Article Abstract
Rhombohedral boron carbide, often referred to as r-BC, is a potential material for applications in optoelectronic and thermoelectric devices. From fundamental thin film growth and characterization, we investigate the film-substrate interface between the r-BC films grown on 4H-SiC (0001̄) (C-face) and 4H-SiC (0001) (Si-face) during chemical vapor deposition (CVD) to find the origin for epitaxial growth solely observed on the C-face. We used high-resolution (scanning) transmission electron microscopy and electron energy loss spectroscopy to show that there is no surface roughness or additional carbon-based interlayer formation for either substrate. Based on Raman spectroscopy analysis, we also argue that carbon accumulation on the surface hinders the growth of continued epitaxial r-BC in CVD.
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| http://dx.doi.org/10.1039/d4dt01157k | DOI Listing |
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