Earth-abundant metal oxides are usually considered as stable but catalytically inert toward hydrogen evolution reaction (HER) due to their unfavorable hydrogen intermediate adsorption performance. Herein, a heavy rare earth (Y) and transition metal (Co) dual-doping induced lattice strain and oxygen vacancy stabilization strategy is proposed to boost CeO toward robust alkaline HER. The induced lattice compression and increased oxygen vacancy (O) concentration in CeO synergistically improve the water dissociation on O sites and sequential hydrogen adsorption at activated O-neighboring sites, leading to significantly enhanced HER kinetics. Meanwhile, Y doping offers stabilization effect on O by its stronger Y─O bonding over Ce─O, which endows the catalyst with excellent stability. The Y,Co-CeO electrocatalyst exhibits an ultra-low HER overpotential (27 mV at 10 mA cm) and Tafel slope (48 mV dec), outperforming the benchmark Pt electrocatalyst. Moreover, the anion exchange membrane water electrolyzer incorporated with Y,Co-CeO achieves excellent stability of 500 h under 600 mA cm. This synergistic lattice strain and oxygen vacancy stabilization strategy sheds new light on the rational development of efficient and stable oxide-based HER electrocatalysts.
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http://dx.doi.org/10.1002/adma.202405970 | DOI Listing |
Sci Rep
March 2025
New Technologies Research Center, Amirkabir University of Technology, Tehran, Iran.
The study investigated the effects of Sr-doping on BaTiO₃ regarding the mean square displacement, diffusion coefficient, polarization-strain response, dielectric constant, and dielectric loss. Initially, increasing strontium doping up to 6% enhanced the mean square displacement (from 0.211 to 0.
View Article and Find Full Text PDFHeliyon
February 2025
Department of Physics, Bangladesh University of Engineering and Technology, Dhaka, Bangladesh.
The low-cost hydrothermal method has been successfully applied to synthesize MnS-incorporated MoS nanoflowers (MoS/MnS). The FE-SEM, TEM, XRD, Raman, UV-VIS, and density functional theory (DFT) were used to investigate the surface morphology, structural property, optical property, and simulated optical and dielectric properties. FE-SEM and TEM images reveal the 3D flower-like structure of MoS and the flower-like structure of the nanocomposite.
View Article and Find Full Text PDFACS Nano
March 2025
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
We report the influence of spontaneous lattice distortion on the helical spin spiral states in centrosymmetric helimagnet MnCoSi. With the help of in situ Lorentz transmission electron microscopy, we observed significant distortion─up to 57%─in the helical spin order of MnCoSi thin lamella samples. Our analysis, integrating density functional theory calculations with micromagnetic simulations, confirmed that the spontaneous lattice distortion is induced by the variation in the specimen thickness, which therefore modulates the nearest-neighbor exchange interaction and the next-nearest-neighbor exchange interaction , leading to a change in the spin rotational periodicity.
View Article and Find Full Text PDFSmall Methods
March 2025
School of Integrated Circuits and Electronics & Advanced Research Institute of Multidisciplinary Science & Department of Physics, Beijing Institute of Technology, Beijing, 100081, China.
Defect engineering provides a precise and controlled approach to modify the localized electronic properties through crystalline interruption. In 2D electron-correlated materials, periodic lattice distortions often coexist with charge density waves (CDWs) and Mott insulating states, which are highly sensitive to local electronic environments. However, the influence of complex, inequivalent defect sites on electron-correlated properties, particularly Mott behavior, remains poorly understood.
View Article and Find Full Text PDFLangmuir
March 2025
Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240, China.
Strain engineering of patterned silicon on a sapphire wafer is achieved by modulating the spatial confined plasma during ultrafast laser-induced backward transfer. High-energy laser-ablated silicon plasma can be generated within the confined space, where a transitional SiO layer is formed in the silicon-sapphire interface. Heat transfer to sapphire can thus be hindered, which is beneficial for thermal accumulation in silicon and crystallinity improvement.
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