AI Article Synopsis
- Silicon nanowires show promise as materials for polarization-sensitive applications, demonstrating an anisotropic photocurrent ratio of 1.59 at 780 nm.
- The metal-single silicon nanowire-metal photodetector exhibits impressive performance with a responsivity of 24.58 mA/W and a detectivity of 8.88 × 10 Jones at 980 nm.
- The research highlights the potential for creating cost-effective and integrated on-chip optical chips due to the established silicon processing techniques.
Article Abstract
Silicon nanowire is a potential candidate to be used as polarization-sensitive material, but the relative mechanism of polarization response must be carried out. Herein, a sub-micron metal-single silicon nanowire-metal photodetector exhibits polarization-sensitive characteristics with an anisotropic photocurrent ratio of 1.59 at 780 nm, an excellent responsivity of 24.58 mA/W, and a high detectivity of 8.88 × 10 Jones at 980 nm. The underlying principle of optical anisotropy in silicon nanowire is attributed to resonance enhancement verified by polarizing light microscopy and simulation. Furthermore, Stokes parameter measurements and imaging are all demonstrated by detecting the characteristics of linearly polarized light and imaging the polarizer array, respectively. Given the maturity of silicon processing, the sub-micron linearly polarized light detection proposed in this study lays the groundwork for achieving highly integrated, simplified processes, and cost-effective on-chip polarization-sensitive optical chips in the future.
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| http://dx.doi.org/10.1364/OE.520500 | DOI Listing |
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