Stable dual-wavelength emission from a laser is desirable for microwave signal generation using the optical heterodyning method. As both optical wavelengths are generated from the same cavity, the phase noise of the generated microwave signal is minimized. In this work, we exploit the inherent birefringence in the buried heterostructure semiconductor laser to generate dual polarized modes. We carefully analyze the mode competition between various modes in the cavity and propose the desirable gain modification conditions for stable dual mode oscillations when the laser is operating near the threshold. We show that the required asymmetry in the gain for two stable modes can be obtained from the mode confinement factors and facet losses. We also show the applicability of our results to a homogeneously broadened multimode laser.
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Mater Horiz
January 2025
Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800 Kgs. Lyngby, Denmark.
The symmetry breaking that is formed when oxide layers are combined epitaxially to form heterostructures has led to the emergence of new functionalities beyond those observed in the individual parent materials. SrTiO-based heterostructures have played a central role in expanding the range of functional properties arising at the heterointerface and elucidating their mechanistic origin. The heterostructure formed by the epitaxial combination of spinel γ-AlO and perovskite SrTiO constitutes a striking example with features distinct from perovskite/perovskite counterparts such as the archetypical LaAlO/SrTiO heterostructure.
View Article and Find Full Text PDFNano Lett
December 2024
Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, Pennsylvania 15260, United States.
We demonstrate an approach to creating nanoscale potentials in van der Waals layers integrated with a buried programmable ferroelectric layer. Using ultra-low-voltage electron beam lithography (ULV-EBL), we can program the ferroelectric polarization in AlBN (AlBN) thin films, generating structures with sizes as small as 35 nm. We demonstrate the ferroelectric field effect with a graphene/vdW stack on AlBN by creating a p-n junction.
View Article and Find Full Text PDFA low-cost and low-power-consumption optical transmitter with a narrow shoreline is crucial for short-reach optical communication. To increase the shoreline bandwidth density (Gbps/mm) at low cost, multiple optical components, including lasers, should be integrated on a single chip. In this study, we develop a sixteen-channel membrane laser array integrated with silica-based spot-size convertors on a SiO/Si substrate, with a footprint of 1.
View Article and Find Full Text PDFACS Nano
November 2024
Department of Physics, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States.
Spin-helical Dirac Fermions at a doped topological insulator's boundaries can support Majorana quasiparticles when coupled with -wave superconductors, but in -doped systems, the requisite induced Cooper pairing in topological states is often buried at heterointerfaces or complicated by degenerate coupling with bulk conduction carriers. Rarely probed are -doped topological structures with nondegenerate Dirac and bulk valence bands at the Fermi level, which may foster long-range superconductivity without sacrificing Majorana physics. Using ultrahigh-resolution photoemission, we report proximity pairing with a large decay length in -doped topological SbTe on superconducting Nb.
View Article and Find Full Text PDFACS Appl Mater Interfaces
September 2024
Department of Energy Conversion and Storage, Technical University of Denmark, Fysikvej, Building 310, 2800, Kongens Lyngby, Denmark.
Ferroionic materials combine ferroelectric properties and spontaneous polarization with ionic phenomena of fast charge recombination and electrodic functionalities. In this paper, we propose the concept of tunable polarization in CeO (ceria) thin (5 nm) films induced by built-in remnant polarization of a BaTiO (BTO) ferroelectric thin film interface, which is buried under the ceria layer. Upward and downward fixed polarizations at the BTO thin film (10 nm) are achieved by the lattice termination engineering of the SrO or TiO terminated Nb:SrTiO (NSTO or STN) substrate.
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