Two-dimensional ultrathin ferroelectrics have attracted much interest due to their potential application in high-density integration of non-volatile memory devices. Recently, 2D van der Waals ferroelectric based on interlayer translation has been reported in twisted bilayer h-BN and transition metal dichalcogenides (TMDs). However, sliding ferroelectricity is not well studied in non-twisted homo-bilayer TMD grown directly by chemical vapor deposition (CVD). In this paper, for the first time, experimental observation of a room-temperature out-of-plane ferroelectric switch in semiconducting bilayer 3R MoS synthesized by reverse-flow CVD is reported. Piezoelectric force microscopy (PFM) hysteretic loops and first principle calculations demonstrate that the ferroelectric nature and polarization switching processes are based on interlayer sliding. The vertical Au/3R MoS/Pt device exhibits a switchable diode effect. Polarization modulated Schottky barrier height and polarization coupling of interfacial deep states trapping/detrapping may serve in coordination to determine switchable diode effect. The room-temperature ferroelectricity of CVD-grown MoS will proceed with the potential wafer-scale integration of 2D TMDs in the logic circuit.
Download full-text PDF |
Source |
|---|---|
| http://dx.doi.org/10.1002/adma.202400670 | DOI Listing |
Publication Analysis
Top Keywords
Similar Publications
Roadmap for Borophene Gas Sensors.
ACS Sens
January 2025
Chimie des Interactions Plasma Surface group, Chemistry Department, Université de Mons, 7000 Mons, Belgium.
Borophene, a two-dimensional allotrope of boron, has emerged as a promising material for gas sensing because of its exceptional electronic properties and high surface reactivity. This review comprehensively overviews borophene synthesis methods, properties, and sensing applications. However, it is crucial to acknowledge the substantial gap between the abundance of theoretical literature and the limited experimental studies.
View Article and Find Full Text PDFInvestigating the Current-Carrying Friction Mechanism of n-Type and p-Type Two-Dimensional TMD under a Positive Electric Field.
ACS Appl Mater Interfaces
January 2025
State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China.
Nanofriction plays an important role in the performance and lifetime of n-type or p-type TMD-based semiconductor nanodevices. However, the mechanism of nanofriction in n-type and p-type TMD semiconductors under an electric field is still blurry. In this paper, monolayers of n-MoSe and p-WSe materials were prepared by chemical vapor deposition (CVD), and their nanofriction behavior under positive electric field was investigated.
View Article and Find Full Text PDFNanostructure fabrication by area selective deposition: a brief review.
Mater Horiz
January 2025
Department of Chemical Engineering, Stanford University, Stanford, California 94305, USA.
In recent years, area-selective deposition (ASD) processes have attracted increasing interest in both academia and industry due to their bottom-up nature, which can simplify current fabrication processes with improved process accuracy. Hence, more research is being conducted to both expand the toolbox of ASD processes to fabricate nanostructured materials and to understand the underlying mechanisms that impact selectivity. This article provides an overview of current developments in ASD processes, beginning with an introduction to various approaches to achieve ASD and the factors that affect selectivity between growth and non-growth surfaces, using area-selective atomic layer deposition (AS-ALD) as the main model system.
View Article and Find Full Text PDFPreparation of Robust, Antireflective and Superhydrophobic Hierarchical Coatings on PMMA Substrates via Mechanical Locking and Chemical Bonding.
ACS Appl Mater Interfaces
January 2025
Functional Nanomaterials Laboratory, Center for Micro/Nanomaterials and Technology, and Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, China.
Antireflection (AR) coatings with mechanical robustness and superhydrophobic properties have wide potential applications in optical, electronic, and automotive fields. However, the fabrication of large-sized, robust, and multifunctional AR coatings on plastic/polymer substrates has been a challenging problem. In this study, we developed a bottom-up approach to produce mechanically robust, enhanced transmittance, and superhydrophobic coatings on poly(methyl methacrylate) (PMMA) substrate.
View Article and Find Full Text PDFThree-dimensional photoluminescence imaging of threading dislocations in GaN by sub-band optical excitation.
Sci Rep
January 2025
Lawrence Livermore National Lab, Livermore, CA, 94550, USA.
GaN is rapidly gaining attention for implementation in power electronics but is still impacted by its high density of threading dislocations (TDs), which have been shown to facilitate current leakage through devices limiting their performance and reliability. Here, we discuss a novel implementation of photoluminescence (PL) imaging to study TDs in regions within vertically structured p-i-n GaN (PIN) diodes consisting of metalorganic chemical vapor deposition (MOCVD) epitaxial layers grown on ammonothermal GaN (am-GaN) substrates. PL imaging with a sub-bandgap excitation energy (3.
View Article and Find Full Text PDFWant AI Summaries of new PubMed Abstracts delivered to your In-box?
Enter search terms and have AI summaries delivered each week - change queries or unsubscribe any time!