Se alloying has enabled significantly higher carrier lifetimes and photocurrents in CdTe solar cells, but these benefits can be highly dependent on CdSeTe processing. This work evaluates the optoelectronic, chemical, and electronic properties of thick (3 µm) undoped CdSeTe of uniform composition and varied processing conditions (CdSeTe evaporation rate, CdCl anneal, Se content) chosen to reflect various standard device processing conditions. Sub-bandgap defect emission is observed, which increased as Se content increased and with "GrV-optimized CdCl" (i.e., CdCl anneal conditions used for group-V-doped devices). Low carrier lifetime is found for GrV-optimized CdCl, slow CdSeTe deposition, and low-Se films. Interestingly, all films (including CdTe control) exhibited n-type behavior, where electron density increased with Se up to an estimated ≈10 cm. This behavior appears to originate during the CdCl anneal, possibly from Se diffusion leading to anion vacancy (e.g., V, V) and Cl generation.
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| http://dx.doi.org/10.1002/advs.202309264 | DOI Listing |
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