The unique electronic properties of topological quantum materials, such as protected surface states and exotic quasiparticles, can provide an out-of-plane spin-polarized current needed for external field-free magnetization switching of magnets with perpendicular magnetic anisotropy. Conventional spin-orbit torque (SOT) materials provide only an in-plane spin-polarized current, and recently explored materials with lower crystal symmetries provide very low out-of-plane spin-polarized current components, which are not suitable for energy-efficient SOT applications. Here, we demonstrate a large out-of-plane damping-like SOT at room temperature using the topological Weyl semimetal candidate TaIrTe with a lower crystal symmetry. We performed spin-torque ferromagnetic resonance (STFMR) and second harmonic Hall measurements on devices based on TaIrTe/NiFe heterostructures and observed a large out-of-plane damping-like SOT efficiency. The out-of-plane spin Hall conductivity is estimated to be (4.05 ± 0.23)×10 (ℏ ⁄ 2e) (Ωm), which is an order of magnitude higher than the reported values in other materials.
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http://dx.doi.org/10.1038/s41467-024-48872-3 | DOI Listing |
Adv Mater
December 2024
Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
High contact resistance remains the primary obstacle that hinders further advancements of organic semiconductors (OSCs) in electronic circuits. While significant effort has been directed toward lowering the energy barrier at OSC/metal contact interfaces, approaches toward reducing another major contributor to overall contact resistance - the bulk resistance - have been limited to minimizing the thickness of OSC films. However, the out-of-plane conductivity of OSCs, a critical aspect of bulk resistance, has largely remained unaddressed.
View Article and Find Full Text PDFACS Nano
December 2024
Department of Materials Science and Engineering, National University of Singapore, Singapore117575, Singapore.
A Rashba spin-splitting state with spin-momentum locking enables the charge-spin interconversion known as the Rashba effect, induced by the interplay of inversion symmetry breaking (ISB) and spin-orbit coupling (SOC). Enhancing spin-splitting strength is promising to achieve high spin-orbit torque (SOT) efficiency for low-power-consumption spintronic devices. However, the energy scale of natural ISB at the interface is relatively small, leading to the weak Rashba effect.
View Article and Find Full Text PDFJ Phys Chem Lett
December 2024
CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, University of Science and Technology of China, Hefei 230027, China.
Moiré potentials caused by lattice mismatches significantly alter electrons in two-dimensional materials, inspiring the discovery of numerous unique physical properties. While strain modulates the structure and symmetry of the moiré potential, serving as a tuning mechanism for interactions, the impact of out-of-plane deformation, e.g.
View Article and Find Full Text PDFSmall Methods
December 2024
Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices, School of Physics, Sun Yat-sen University, Guangzhou, 510275, China.
2D) Van der Waals ferroelectrics offer the opportunity for developing novel nanoelectronics devices. For device applications, it is necessary to generate controllable ferroelectric polarization domains and achieve non-destructive polarization switching. However, it is very challenging to use the electric field to manipulate the domain state of ultra-thin ferroelectric film due to the large leakage current and even electric breakdown.
View Article and Find Full Text PDFPhys Rev Lett
November 2024
Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, USA.
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