Carbon quantum dots (C-dots) have emerged as efficient fluorescent materials for solid-state lighting devices. However, it is still a challenge to obtain highly bright solid-state C-dots because of the aggregation caused quenching. Compared to the encapsulation of as-prepared C-dots in matrices, one-step preparation of C-dots/matrix complex is a good method to obtain highly bright solid-state C-dots, which is still quite limited. Here, an efficient and controllable vacuum-boosting gradient heating approach is demonstrated for in situ synthesis of a stable and efficient C-dots/matrix complex. The addition of boric acid strongly bonded with urea, promoting the selectivity of the reaction between citric acid and urea. Benefiting from the high reaction selectivity and spatial-confinement growth of C-dots in porous matrices, in situ synthesize C-dots bonded can synthesized dominantly with a crosslinked octa-cyclic compound, biuret and cyanuric acid (triuret). The obtained C-dots/matrix complex exhibited bright green emission with a quantum yield as high as 90% and excellent thermal and photo stability. As a proof-of-concept, the as-prepared C-dots are used for the fabrication of white light-emitting diodes (LEDs) with a color rendering index of 84 and luminous efficiency of 88.14 lm W, showing great potential for applications in LEDs.
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http://dx.doi.org/10.1002/smll.202401812 | DOI Listing |
ACS Nano
January 2025
Department of Chemical and Biomolecular Engineering, Lehigh University, 124 E. Morton Street, Bethlehem, Pennsylvania 18015, United States.
Quantum dot (QD) light-emitting diodes (QLEDs) are promising candidates for next-generation displays because of their high efficiency, brightness, broad color gamut, and solution-processability. Large-scale solution-processing of electroluminescent QLEDs poses significant challenges, particularly concerning the precise control of the active layer's thickness and uniformity. These obstacles directly impact charge transport, leading to current leakage and reduced overall efficiency.
View Article and Find Full Text PDFEvent cameras only report changes in brightness when thresholds in individual pixels relative to previous levels are crossed. They output sparse streams of events that quantify these changes spatially and temporally. We have developed a measurement system using two event cameras in a stereo configuration with a specialized projector for 3D measurements of static objects.
View Article and Find Full Text PDFUltrason Sonochem
January 2025
Department of Applied Science and Technology, Politecnico di Torino, Corso Duca degli Abruzzi 24, 10129 Turin, Italy; Polito(BIO)Med Lab, Politecnico di Torino, 10129 Turin, Italy. Electronic address:
In the context of molecular imaging, the present work explores an innovative platform made of lipid-coated nanocrystals as contrast-enhanced agent for both ultrasound imaging and sonoluminescence. At first, the dynamics of gas bubbles generation and cavitation under insonation with either pristine or lipid-coated nanocrystals (ZnO-Lip) are described, and the differences between the two colloidal systems are highlighted. These ZnO-Lip show an unprecedented ability to assist cavitation, which is reflected in enhanced sonoluminescent light emission with respect to the pristine nanocrystals or the pure water.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
Astronomy Department, University of Maryland, College Park, Maryland 20742, United States.
The CN stretch frequency of neutral, gas-phase 9-cyanoanthracene is 2207 cm (4.531 μm) based on high-resolution infrared absorption experiments coupled with a new hybrid anharmonic quantum chemical methodology. A broad band (full-width at half-maximum of 47 cm) is observed and assigned to multiple transitions, including the CN stretch fundamental and various combination bands that gather intensity from strong anharmonic coupling with the bright CN stretch.
View Article and Find Full Text PDFSci Rep
January 2025
IBM T. J. Watson Research Center, Yorktown Heights, NY, 10598, USA.
The development of high-brightness electron sources is critical to state-of-the-art electron accelerator applications like X-ray free electron laser (XFEL) and ultra-fast electron microscopy. Cesium telluride is chosen as the electron source material for multiple cutting-edge XFEL facilities worldwide. This manuscript presents the first demonstration of the growth of highly crystalized and epitaxial cesium telluride thin films on 4H-SiC and graphene/4H-SiC substrates with ultrasmooth film surfaces.
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