Magnetic skyrmions are potential candidates for neuromorphic computing because of their inherent topological stability, low drive current density and nanoscale size. However, an artificial neuron device based on current-driven skyrmion motion cannot satisfy the requirement of energy efficiency and integration density due to hundreds of millions of interconnected neurons and synapses present in the deep networks. Here, we present a compact and energy efficient skyrmion-based artificial neuron consisting of ferromagnetic/heavy metal/ferroelectric layers which uses strain-mediated voltage manipulation of skyrmion states to mimic the Integrate-and-Fire (IF) function of biological neurons. By implementation of a spiking neural network (SNN) based on the proposed skyrmionic neuronal devices, it can achieve a high accuracy of 95.08% on a modified National Institute of Standards and Technology (MNIST) handwritten digit dataset, as well as a low power consumption of ∼46.8 fJ per epoch per neuron. The present work suggests a novel way to realize energy-efficient and high-density neuromorphic computing.
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http://dx.doi.org/10.1039/d4nr01464b | DOI Listing |
Phys Rev Lett
December 2024
University of Strathclyde, Institute of Photonics, SUPA Dept of Physics, Glasgow, United Kingdom.
We report a spiking flip-flop memory mechanism that allows controllably switching between neural-like excitable spike-firing and quiescent dynamics in a resonant tunneling diode (RTD) neuron under low-amplitude (<150 mV pulses) and high-speed (ns rate) inputs pulses. We also show that the timing of the set-reset input pulses is critical to elicit switching responses between spiking and quiescent regimes in the system. The demonstrated flip-flop spiking memory, in which spiking regimes can be controllably excited, stored, and inhibited in RTD neurons via specific low-amplitude, high-speed signals (delivered at proper time instants) offers high promise for RTD-based spiking neural networks, with the potential to be extended further to optoelectronic implementations where RTD neurons and RTD memory elements are deployed alongside for fast and efficient photonic-electronic neuromorphic computing and artificial intelligence hardware.
View Article and Find Full Text PDFACS Nano
January 2025
IBM Research Europe - Zurich, 8803 Rüschlikon, Switzerland.
Devices with a highly nonlinear resistance-voltage relationship are candidates for neuromorphic computing, which can be achieved by highly temperature dependent processes like ion migration. To explore the thermal properties of such devices, Scanning Thermal Microscopy (SThM) can be employed. However, due to the nonlinearity, the high resolution and quantitative method of AC-modulated SThM cannot readily be used.
View Article and Find Full Text PDFAngew Chem Int Ed Engl
January 2025
Sun Yat-Sen University, School of Material Science and Engineering, Nr.135 Xingang Xi Road, 510275, Guangzhou, CHINA.
Degradable features are highly desirable to advance next-generation organic mixed ionic-electronic conductors (OMIECs) for transient bioinspired artificial intelligence devices.It is highly challenging that OMIECs exhibit excellent mixed ionic-electronic behavior and show degradability simultaneously.Specially,in OMIECs,doping is often a tradeoff between structural disorder and charge carrier mobilities.
View Article and Find Full Text PDFMatrix-vector multiplications (MVMs) are essential for a wide range of applications, particularly in modern machine learning and quantum computing. In photonics, there is growing interest in developing architectures capable of performing linear operations with high speed, low latency, and minimal loss. Traditional interferometric photonic architectures, such as the Clements design, have been extensively used for MVM operations.
View Article and Find Full Text PDFJ Phys Chem Lett
January 2025
Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, Virginia 22904, United States.
Vanadium oxide (VO) is an exotic phase-change material with diverse applications ranging from thermochromic smart windows to thermal sensors, neuromorphic computing, and tunable metasurfaces. Nonetheless, the mechanism responsible for its metal-insulator phase transition remains a subject of vigorous debate. Here, we investigate the ultrafast dynamics of the photoinduced phase transition in VO under low perturbation conditions.
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