Severity: Warning
Message: file_get_contents(https://...@gmail.com&api_key=61f08fa0b96a73de8c900d749fcb997acc09): Failed to open stream: HTTP request failed! HTTP/1.1 429 Too Many Requests
Filename: helpers/my_audit_helper.php
Line Number: 143
Backtrace:
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 143
Function: file_get_contents
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 209
Function: simplexml_load_file_from_url
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 994
Function: getPubMedXML
File: /var/www/html/application/helpers/my_audit_helper.php
Line: 3134
Function: GetPubMedArticleOutput_2016
File: /var/www/html/application/controllers/Detail.php
Line: 574
Function: pubMedSearch_Global
File: /var/www/html/application/controllers/Detail.php
Line: 488
Function: pubMedGetRelatedKeyword
File: /var/www/html/index.php
Line: 316
Function: require_once
SnO and tantalum doped SnO (TTO) thin films were prepared using reactive hollow cathode gas flow sputtering (GFS) on glass substrates. An in-situ heating process under vacuum preceded the sputtering. The resistivity of the tin oxide films was reduced to a remarkable low of 2.02 × 10 Ω cm, with a carrier concentration of 2.55 × 10 cm and a mobility of 12.11 cmVs. As the substrate temperature increased, the film resistivity decreased. Notably, at a substrate temperature of 270 °C, the effect of Ta doping on the film resistivity and carrier concentration was significantly stronger compared to higher temperatures. Elevating the substrate temperature and Ta doping resulted in a lower refractive index (n). This effect was consistently strong at higher temperatures, attributed to the higher film-free carrier concentration (4.54 × 10 cm) compared to lower temperatures (2.35 × 10 cm). The film's structure was characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD) and atomic force microscope (AFM). The preferred direction of film growth was discussed. The successful and reproducible fabrication of tin oxide films underscores the advantages of gas flow sputtering (GFS) technology. GFS offers stable operating conditions across various oxygen flow levels without requiring target oxidization control, as is required in magnetron sputtering when managing gas status and film quality.
Download full-text PDF |
Source |
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http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11126838 | PMC |
http://dx.doi.org/10.1016/j.heliyon.2024.e30943 | DOI Listing |
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