AI Article Synopsis
- Researchers are working on advanced terahertz (THz) wave generation using innovative multi-quantum well (MQW) IMPATT diodes made from AlGaN/GaN materials.
- They explored two diode types: junction-based and Schottky barrier structures, and introduced techniques like mesa etching and nitrogen ion implantation to improve performance and reliability.
- Their findings indicate that the Schottky barrier design significantly enhances power output and efficiency, making their devices superior to existing THz sources and opening new possibilities for THz technology applications.
Article Abstract
In our pursuit of high-power terahertz (THz) wave generation, we propose innovative edge-terminated single-drift region (SDR) multi-quantum well (MQW) impact avalanche transit time (IMPATT) structures based on the AlGaN/GaN/AlGaN material system, with a fixed aluminum mole fraction of = 0.3. Two distinct MQW diode configurations, namely junction-based and Schottky barrier diode structures, were investigated for their THz potential. To enhance reverse breakdown characteristics, we propose employing mesa etching and nitrogen ion implantation for edge termination, mitigating issues related to premature and soft breakdown. The THz performance is comprehensively evaluated through steady-state and high-frequency characterizations using a self-consistent quantum drift-diffusion (SCQDD) model. Our proposed AlGaN/GaN/AlGaN MQW diodes, as well as GaN-based single-drift region (SDR) and 3C-SiC/Si/3C-SiC MQW-based double-drift region (DDR) IMPATT diodes, are simulated. The Schottky barrier in the proposed diodes significantly reduces device series resistance, enhancing peak continuous wave power output to approximately 300 mW and DC to THz conversion efficiency to nearly 13% at 1.0 THz. Noise performance analysis reveals that MQW structures within the avalanche zone mitigate noise and improve overall performance. Benchmarking against state-of-the-art THz sources establishes the superiority of our proposed THz sources, highlighting their potential for advancing THz technology and its applications.
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|---|---|
| http://www.ncbi.nlm.nih.gov/pmc/articles/PMC11123759 | PMC |
| http://dx.doi.org/10.3390/nano14100873 | DOI Listing |
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